GaAs diode dark currents are correlated over a very large proton energy range as a function of displacement damage dose (DDD). The linearity of the dark current increase with DDD over a wide range of applied voltage bias deems this device an excellent candidate for a displacement damage dosimeter. Additional proton testing performed in situ enabled error estimate determination to within 10% for simulated space use
Proton irradiation effects have been studied on CMOS image sensors manufactured in a 0.18 μm technol...
This paper proposes the Active Precharge Hammering on a Row (APHR) test to evaluate displacement dam...
Current methods for calculating damage to solar cells are well documented in the GaAs Solar Cell Rad...
Dark current increase distributions due to displacement damages are modeled using displacement damag...
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sen...
InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark cu...
Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated t...
Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated t...
Several CMOS image sensors were exposed to neutron or proton beams (displacement damage dose range f...
International audienceDark current Random Telegraph Signals due to total ionizing dose (TID) and dis...
International audienceDisplacement damage effects due to proton and neutron irradiations of CMOS ima...
International audienceIn this paper, the displacement damage dose effects in PiN photodiodes is inve...
Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose ...
This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes o...
International audienceThe dark current spectroscopy is tested on twenty CMOS image sensors irradiate...
Proton irradiation effects have been studied on CMOS image sensors manufactured in a 0.18 μm technol...
This paper proposes the Active Precharge Hammering on a Row (APHR) test to evaluate displacement dam...
Current methods for calculating damage to solar cells are well documented in the GaAs Solar Cell Rad...
Dark current increase distributions due to displacement damages are modeled using displacement damag...
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sen...
InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark cu...
Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated t...
Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated t...
Several CMOS image sensors were exposed to neutron or proton beams (displacement damage dose range f...
International audienceDark current Random Telegraph Signals due to total ionizing dose (TID) and dis...
International audienceDisplacement damage effects due to proton and neutron irradiations of CMOS ima...
International audienceIn this paper, the displacement damage dose effects in PiN photodiodes is inve...
Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose ...
This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes o...
International audienceThe dark current spectroscopy is tested on twenty CMOS image sensors irradiate...
Proton irradiation effects have been studied on CMOS image sensors manufactured in a 0.18 μm technol...
This paper proposes the Active Precharge Hammering on a Row (APHR) test to evaluate displacement dam...
Current methods for calculating damage to solar cells are well documented in the GaAs Solar Cell Rad...