We report large modulations in the far infrared absorption of semimetallic InAs/GaSb superlattices in parallel field. The strong absorption is attributed to direct transitions across the minigap at the point where the electron and hole dispersions anticross. The measured minigap energy is found to be in the range 3-10 meV depending on the structure of the sample. The optical results are compared to parallel field magnetoresistance measurements and also to theory using an 8 band k . p calculation. (C) 1998 Elsevier Science B.V. All rights reserved
This thesis studies the transport properties of short period semiconducting InAs/GaSb superlattices ...
We present a theoretical study on optical properties of short-period InAs/GaSb type-II superlattices...
Binary InAs/GaSb superlattices (SLs) grown on GaSb substrates form an ideal material system for the ...
We report large modulations in the far infrared absorption of semimetallic InAs/GaSb superlattices i...
Magnetic field orientated parallel to the superlattice layers enables intersubband absorption to occ...
The optical properties of InAs/GaSb heterostructures under applied magnetic fields are studied in ex...
We have studied the temperature dependence of the magnetoresistance of semimetallic InAs/GaSb struct...
InAs/GaSb heterojunctions offer the unique situation in a semiconductor of overlapping conduction an...
In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n dete...
In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n dete...
Electron transport in InAs/GaSb superlattices under intense parallel electric and magnetic fields is...
This thesis is primarily concerned with far infrared effects in semiconductor heterostructures. Thes...
This thesis is primarily concerned with far infrared effects in semiconductor heterostructures. Thes...
This thesis is primarily concerned with far infrared effects in semiconductor heterostructures. Thes...
This thesis studies the transport properties of short period semiconducting InAs/GaSb superlattices ...
This thesis studies the transport properties of short period semiconducting InAs/GaSb superlattices ...
We present a theoretical study on optical properties of short-period InAs/GaSb type-II superlattices...
Binary InAs/GaSb superlattices (SLs) grown on GaSb substrates form an ideal material system for the ...
We report large modulations in the far infrared absorption of semimetallic InAs/GaSb superlattices i...
Magnetic field orientated parallel to the superlattice layers enables intersubband absorption to occ...
The optical properties of InAs/GaSb heterostructures under applied magnetic fields are studied in ex...
We have studied the temperature dependence of the magnetoresistance of semimetallic InAs/GaSb struct...
InAs/GaSb heterojunctions offer the unique situation in a semiconductor of overlapping conduction an...
In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n dete...
In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n dete...
Electron transport in InAs/GaSb superlattices under intense parallel electric and magnetic fields is...
This thesis is primarily concerned with far infrared effects in semiconductor heterostructures. Thes...
This thesis is primarily concerned with far infrared effects in semiconductor heterostructures. Thes...
This thesis is primarily concerned with far infrared effects in semiconductor heterostructures. Thes...
This thesis studies the transport properties of short period semiconducting InAs/GaSb superlattices ...
This thesis studies the transport properties of short period semiconducting InAs/GaSb superlattices ...
We present a theoretical study on optical properties of short-period InAs/GaSb type-II superlattices...
Binary InAs/GaSb superlattices (SLs) grown on GaSb substrates form an ideal material system for the ...