Thermally stimulated current (TSC) and thermoluminescence (TL) measurements are performed in high resistivity AgGaS2 crystals between 10 and 270 K. About 40 K the spectrum shows at the same time TSC and TL peaks. Correlation between this two phenomena permits us to explain the recombination process. In the range 70 to 200 K we observed several overlapping TSC's peaks which obey to monomolecular kinetic. At higher temperature the TSC spectra are dominated by two levels with complex kinetic. The levels depth calculated are similar to those obtained in our luminescence studies.Des mesures de courants thermostimulés (TSC) et de thermoluminescence (TL) ont été effectuées sur des cristaux de AgGaS2 (de haute résistivité) entre 10 et 270 K. Aux en...
Photoluminescence and related studies have been made of CuGaS2 and CuAlS2 crystals grown by iodine t...
Thermoluminescence of KI:Tl, x- or β-irradiated at T230°K. We suggestthat in the temperature ra...
In this paper we study the thermal behaviour of the broad band emissions from impurity-doped and sel...
Recombination processes of electron-hole in KI : Tl crystals X-irradiated at 77 K are studied by sim...
Characterization of defect centers existing in GaS single crystals were studied by virtue of thermol...
This paper is concerned with the luminescence of AgGaS2. An analysis is given of a structured edge é...
Silver thiogallate (AgGaS2) is a ternary semiconductor which crystallizes in the chalcopyrite struct...
Trap centers in Tl2GaInS4 single crystals have been investigated by thermoluminescence (TL) measurem...
Thermoluminescence (TL) measurements in Tl2InGaSe4-layered single crystals have been carried out in ...
Photoluminescence (PL) and thermally stimulated current (TSC) spectra of Tl4Ga3InSe6S2 layered cryst...
Thermoluminescence properties of TlGaSeS layered single crystals were investigated in the temperatur...
The Silver Gallium Sulfide (AgGaS2) ternary compound is a wide bandgap semiconductor (about 2.7 eV) ...
Thermoluminescence (TL) properties of Tl2Ga2S3Se layered single crystals were researched in the temp...
Thermally stimulated luminescence (TSL) is known as a technique used in radiation dosimetry and dati...
Distribution of shallow trap levels in AgIn5S8 crystals has been investigated by thermoluminescence ...
Photoluminescence and related studies have been made of CuGaS2 and CuAlS2 crystals grown by iodine t...
Thermoluminescence of KI:Tl, x- or β-irradiated at T230°K. We suggestthat in the temperature ra...
In this paper we study the thermal behaviour of the broad band emissions from impurity-doped and sel...
Recombination processes of electron-hole in KI : Tl crystals X-irradiated at 77 K are studied by sim...
Characterization of defect centers existing in GaS single crystals were studied by virtue of thermol...
This paper is concerned with the luminescence of AgGaS2. An analysis is given of a structured edge é...
Silver thiogallate (AgGaS2) is a ternary semiconductor which crystallizes in the chalcopyrite struct...
Trap centers in Tl2GaInS4 single crystals have been investigated by thermoluminescence (TL) measurem...
Thermoluminescence (TL) measurements in Tl2InGaSe4-layered single crystals have been carried out in ...
Photoluminescence (PL) and thermally stimulated current (TSC) spectra of Tl4Ga3InSe6S2 layered cryst...
Thermoluminescence properties of TlGaSeS layered single crystals were investigated in the temperatur...
The Silver Gallium Sulfide (AgGaS2) ternary compound is a wide bandgap semiconductor (about 2.7 eV) ...
Thermoluminescence (TL) properties of Tl2Ga2S3Se layered single crystals were researched in the temp...
Thermally stimulated luminescence (TSL) is known as a technique used in radiation dosimetry and dati...
Distribution of shallow trap levels in AgIn5S8 crystals has been investigated by thermoluminescence ...
Photoluminescence and related studies have been made of CuGaS2 and CuAlS2 crystals grown by iodine t...
Thermoluminescence of KI:Tl, x- or β-irradiated at T230°K. We suggestthat in the temperature ra...
In this paper we study the thermal behaviour of the broad band emissions from impurity-doped and sel...