We have studied the equilibrium electrostatic profile of III-V semiconductor nanowires using Kelvin probe force microscopy. Qualitative agreement of the measured surface potential levels and expected Fermi level variation for pure InP and InAs nanowires is obtained from electrical images with spatial resolution as low as 10 nm. Surface potential mapping for pure and heterostructured nanowires suggests the existence of charge transfer mechanisms and the formation of a metal-semiconductor electrical contact at the nanowire apex.2046570
International audienceKelvin force microscopy provides a spatially resolved measurement of the surfa...
We show how a scanning probe microscope (SPM) can be used to image electron flow through InAs nanowi...
ABSTRACT: Utilizing semiconductor nanowires for (opto)-electronics requires exact knowledge of their...
As electronic devices are downsized, physical processes at the interface to electrodes may dominate ...
This project is to develope a new method of characterization for Silicon-nano-wire (SiNW) FET and SE...
Orientador: Mônica Alonso CottaDissertação (mestrado) - Universidade Estadual de Campinas, Instituto...
In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can b...
We investigate the dependency of electrostatic interaction forces on applied potentials in electrost...
As is well known, Kelvin Probe Force Microscopy (KPFM) is a powerful and versatile tool to measure t...
Wafer-scale fabrication of semiconductor nanowire devices is readily facilitated by lithography-base...
It remains a challenge to characterize the doping type in nanowires (NWs). We report in this paper a...
Quasi-one-dimensional (1D) semiconductor nanostructures,such as nanowires (NWs), nanobeams, and nano...
Surface-exposed uniformly doped silicon-on-insulator channels are fabricated to evaluate the accurac...
Nanowires are sensitive to external influences such as surface charges or external electric fields. ...
Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been inves...
International audienceKelvin force microscopy provides a spatially resolved measurement of the surfa...
We show how a scanning probe microscope (SPM) can be used to image electron flow through InAs nanowi...
ABSTRACT: Utilizing semiconductor nanowires for (opto)-electronics requires exact knowledge of their...
As electronic devices are downsized, physical processes at the interface to electrodes may dominate ...
This project is to develope a new method of characterization for Silicon-nano-wire (SiNW) FET and SE...
Orientador: Mônica Alonso CottaDissertação (mestrado) - Universidade Estadual de Campinas, Instituto...
In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can b...
We investigate the dependency of electrostatic interaction forces on applied potentials in electrost...
As is well known, Kelvin Probe Force Microscopy (KPFM) is a powerful and versatile tool to measure t...
Wafer-scale fabrication of semiconductor nanowire devices is readily facilitated by lithography-base...
It remains a challenge to characterize the doping type in nanowires (NWs). We report in this paper a...
Quasi-one-dimensional (1D) semiconductor nanostructures,such as nanowires (NWs), nanobeams, and nano...
Surface-exposed uniformly doped silicon-on-insulator channels are fabricated to evaluate the accurac...
Nanowires are sensitive to external influences such as surface charges or external electric fields. ...
Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been inves...
International audienceKelvin force microscopy provides a spatially resolved measurement of the surfa...
We show how a scanning probe microscope (SPM) can be used to image electron flow through InAs nanowi...
ABSTRACT: Utilizing semiconductor nanowires for (opto)-electronics requires exact knowledge of their...