Experimental results about lattice constant and band gap versus composition x of Pb1-xCdxTe compounds are reported here. These results are somewhat different from those already published. This discrepancy is explained by the presence of CdTe precipitates in the materials used previously. It's pointed out that density and lattice constant measurements cannot show the existence of several percent of precipitated CdTe.Les relations entre les valeurs expérimentales de composition en cadmium x, de paramètre de maille a et de largeur de bande interdite E g, des composés Pb1-xCdxTe, sont présentées pour x < 0,15. Ces résultats sont quelque peu différents de ceux déjà présentés. La différence est expliquée par la présence d'une plus grande quantité...
Empirical pseudopotential calculations for the entire range of alloy concentrations of cubic Cd(1-x)...
The former analysis of the structural data in liquid Pb–Te alloys, based on the neutron diffraction ...
Hall effect and resistivity measurements between 10 and 300 K on n-type CdTe purified by vertical zo...
Evidence concerning the defect structure of CdTe is reviewed with particular reference to the condit...
In the framework of the empirical pseudopotential model, we have studied at the point K = 0 the beha...
<p>Crystal structure data of binary compounds in the Cd-Pr system; phase boundaries at 550°C are giv...
The complete Cd-Pr equilibrium phase diagram was investigated with a combination of powder-XRD, SEM ...
The complete Cd-Pr equilibrium phase diagram was investigated with a combination of powder-XRD, SEM ...
A study of electrically inactive defects has been performed on CdTe single crystals by two different...
A point defect model for the binary compound CdTe proposed in a former paper is generalized to Cd1-x...
The CdTe melt is a predominant associated solution (dissociation grade α=5% at melting point). The a...
CdTe is one of the most important electrooptical materials for many kinds of radiation detectors bec...
Cet article de revue couvre notre travail des dernières années sur le PbTe et l'alliage semiconducte...
Résumé. 2014 Dans cet exposé on passe en revue les différentes méthodes de croissance de tellurure d...
The author’s previously published partial pressures of tellurium over tellurium-rich CdTe are reanal...
Empirical pseudopotential calculations for the entire range of alloy concentrations of cubic Cd(1-x)...
The former analysis of the structural data in liquid Pb–Te alloys, based on the neutron diffraction ...
Hall effect and resistivity measurements between 10 and 300 K on n-type CdTe purified by vertical zo...
Evidence concerning the defect structure of CdTe is reviewed with particular reference to the condit...
In the framework of the empirical pseudopotential model, we have studied at the point K = 0 the beha...
<p>Crystal structure data of binary compounds in the Cd-Pr system; phase boundaries at 550°C are giv...
The complete Cd-Pr equilibrium phase diagram was investigated with a combination of powder-XRD, SEM ...
The complete Cd-Pr equilibrium phase diagram was investigated with a combination of powder-XRD, SEM ...
A study of electrically inactive defects has been performed on CdTe single crystals by two different...
A point defect model for the binary compound CdTe proposed in a former paper is generalized to Cd1-x...
The CdTe melt is a predominant associated solution (dissociation grade α=5% at melting point). The a...
CdTe is one of the most important electrooptical materials for many kinds of radiation detectors bec...
Cet article de revue couvre notre travail des dernières années sur le PbTe et l'alliage semiconducte...
Résumé. 2014 Dans cet exposé on passe en revue les différentes méthodes de croissance de tellurure d...
The author’s previously published partial pressures of tellurium over tellurium-rich CdTe are reanal...
Empirical pseudopotential calculations for the entire range of alloy concentrations of cubic Cd(1-x)...
The former analysis of the structural data in liquid Pb–Te alloys, based on the neutron diffraction ...
Hall effect and resistivity measurements between 10 and 300 K on n-type CdTe purified by vertical zo...