High speed MSI GaAs I. C multiplexers operating up to a 1.9 Gbit/s bit rate have been designed and fabricated in the BFL logic family, using 1 μm gate length MESFET technology. Two types of multiplexers have been developed : a fixed version with 2 inputs and programmable versions, 2, 3 or 4 inputs. The design method and the experimental performances of the fabricated chips are presented. The circuits were based on a common architecture including Johnson counters designed with complementary clocked master-slave flip-flops. By inserting one half of the control logic into the first stage flip-flop, the loop transit time was reduced by one gate propagation delay. The multiplexers were simulated in the time domain non-linear analysis by using a ...
The purpose of the work described in this thesis was to study the use of GaAs MESFETs in digital log...
We present a study on the amplification capabilities of a GaAs distributed dual-gate MESFET structur...
1050-gate arrays have been successfully designed and fabricated. Chip size is 3.75×3.75 mm. A basic ...
GaAs Two-Phase Dynamic FET Logic (TDFL) gates are used in the design of a high-speed, low-power 8-bi...
For the implementation of high-complexity circuits operating at high speed, low-power circuits are e...
This paper presents a combinatorial circuit for fast division Q:=A/D. High speed is achieved thanks ...
A high speed 2:1 multiplexer circuit in source coupled FET logic has been developed and fabricated u...
A 4:1 Time Division Multiplexer(MUX) had been designed in using GaAs Cource Coupled FET Logic (SCFL)...
A ênfase desta tese é em transmissão de dados e sistemas de telecomunicação e prioriza circuitos de ...
Resumo: A ênfase desta tese é em transmissão de dados e sistemas de telecomunicação e prioriza circu...
A GaAs gate array family is fabricated with Thomson Composants Microondes Self Aligned Gallium Arsen...
In this paper design of fast arithmetic circuits using GaAs based Feed Through Logic (FTL) family [1...
In today’s era low power dissipation, high speed and area efficient design has become one of the foc...
Cette thèse est une contribution aux méthodes de conception et de caractérisation des circuits à trè...
[[abstract]]This paper proposes Multiplexer-Flip-Flops (MUX-FFs) to be a high-throughput and low-cos...
The purpose of the work described in this thesis was to study the use of GaAs MESFETs in digital log...
We present a study on the amplification capabilities of a GaAs distributed dual-gate MESFET structur...
1050-gate arrays have been successfully designed and fabricated. Chip size is 3.75×3.75 mm. A basic ...
GaAs Two-Phase Dynamic FET Logic (TDFL) gates are used in the design of a high-speed, low-power 8-bi...
For the implementation of high-complexity circuits operating at high speed, low-power circuits are e...
This paper presents a combinatorial circuit for fast division Q:=A/D. High speed is achieved thanks ...
A high speed 2:1 multiplexer circuit in source coupled FET logic has been developed and fabricated u...
A 4:1 Time Division Multiplexer(MUX) had been designed in using GaAs Cource Coupled FET Logic (SCFL)...
A ênfase desta tese é em transmissão de dados e sistemas de telecomunicação e prioriza circuitos de ...
Resumo: A ênfase desta tese é em transmissão de dados e sistemas de telecomunicação e prioriza circu...
A GaAs gate array family is fabricated with Thomson Composants Microondes Self Aligned Gallium Arsen...
In this paper design of fast arithmetic circuits using GaAs based Feed Through Logic (FTL) family [1...
In today’s era low power dissipation, high speed and area efficient design has become one of the foc...
Cette thèse est une contribution aux méthodes de conception et de caractérisation des circuits à trè...
[[abstract]]This paper proposes Multiplexer-Flip-Flops (MUX-FFs) to be a high-throughput and low-cos...
The purpose of the work described in this thesis was to study the use of GaAs MESFETs in digital log...
We present a study on the amplification capabilities of a GaAs distributed dual-gate MESFET structur...
1050-gate arrays have been successfully designed and fabricated. Chip size is 3.75×3.75 mm. A basic ...