In order to simulate electron transport in the channel of a field-effect transistor in the strong accumulation régime, we have developped a Monte-Carlo particle model in the two-dimensionnal electron gas. We account for the conduction band quantization. The interactions are derived numerically after solving Schrôdinger equation. Moreover, this is the first Monte-Carlo model taking into account the Pauli exclusion principle. We present the results for different confining field strengths, for two temperatures (300 and 77 K) and with or without account for the Pauli exclusion principle.Pour simuler le transport dans le canal d'accumulation d'un transistor à effet de champ en régime de forte accumulation, nous avons mis au point un logiciel de ...
A new algorithm for Monte Carlo simulations of charge transport in semiconductors is devised in orde...
The Monte Carlo method is a very general mathematical tool for the solution of a large variety of pr...
A new algorithm for Monte Carlo simulations of charge transport in semiconductors is devised in orde...
An algorithm is proposed to include Pauli exclusion principle in Monte Carlo simulations. This algor...
An inverse heterojunction field-effect transistor has been simulated by means of the Monte Carlo par...
Cataloged from PDF version of article.An algorithm is proposed to include Pauli exclusion principle ...
Field-effect transistors with tunnel barriers, quantum well channels and surface trapped charges hav...
With the recent advent of devices using heterojunctions, like HEMTs, there exists now a growing inte...
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor...
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor...
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor...
We have studied the transport and tunnelling of electrons in a wedge-shaped GaAs field emitter by me...
A new algorithm for Monte Carlo simulations of charge transport in semiconductors is devised in orde...
A new algorithm for Monte Carlo simulations of charge transport in semiconductors is devised in orde...
The Monte Carlo method is a very general mathematical tool for the solution of a large variety of pr...
A new algorithm for Monte Carlo simulations of charge transport in semiconductors is devised in orde...
The Monte Carlo method is a very general mathematical tool for the solution of a large variety of pr...
A new algorithm for Monte Carlo simulations of charge transport in semiconductors is devised in orde...
An algorithm is proposed to include Pauli exclusion principle in Monte Carlo simulations. This algor...
An inverse heterojunction field-effect transistor has been simulated by means of the Monte Carlo par...
Cataloged from PDF version of article.An algorithm is proposed to include Pauli exclusion principle ...
Field-effect transistors with tunnel barriers, quantum well channels and surface trapped charges hav...
With the recent advent of devices using heterojunctions, like HEMTs, there exists now a growing inte...
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor...
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor...
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor...
We have studied the transport and tunnelling of electrons in a wedge-shaped GaAs field emitter by me...
A new algorithm for Monte Carlo simulations of charge transport in semiconductors is devised in orde...
A new algorithm for Monte Carlo simulations of charge transport in semiconductors is devised in orde...
The Monte Carlo method is a very general mathematical tool for the solution of a large variety of pr...
A new algorithm for Monte Carlo simulations of charge transport in semiconductors is devised in orde...
The Monte Carlo method is a very general mathematical tool for the solution of a large variety of pr...
A new algorithm for Monte Carlo simulations of charge transport in semiconductors is devised in orde...