Measurement of the work function variation ΔΦ of bismuth thin films (250 Å in thickness) as a function of bismuth surface coverage θ (0 < θ ≲ 2.5 ML) was made at different temperatures T (22 ≤ T(K) ≤ 420). Using a modified Topping model, the result for low coverages (θ ≤ 0.5 ML) allow to determine the mean effective dipole moment peff of an adatom and to estimate its effective polarizability α. We obtain : peff (22 K) = (0.29 ± 0.02) D ; peff (76 K) = (0.14 ± 0.02) D ; p eff (100 K) = (0.03 ± 0.02) D ; and α = (89 ± 6) Å3. In this notation, peff (22 K) corresponds to the dipole moment p0 of an isolated bismuth adatom adsorbed on a (0001) terrace. Moreover, to account for the ΔΦ(θ)T curves over the surface coverage range studied we propose t...
Includes bibliographical references.Includes illustrations.The surface adsorption potential for oxyg...
Many studies report an increase in charge carrier concentration in thin bismuth films as their thick...
We report on the electrical resistance and time‐dependent oxidation of thin (≲90 Å) semicontinuous b...
The electrical conductivity of thin bismuth films condensed on amorphous substrates is measured duri...
The resistivity of thin bismuth films grown on sapphire substrates has been measured as a function ...
We have studied the elastoresistance of bismuth thin films by measuring the transverse gauge factor ...
The semimetal character of bismuth and its large photon absorbing power make of this element the mos...
The structure of bismuth thin films prepared according to three different deposition techniques is i...
Un dispositif cryogenique a ete fabrique pour Ie mesure du pouvoir thermoelectrique et une etude pre...
This thesis investigates the properties of bismuth (Bi) nanostructures on a fundamental level and in...
The resistivity and magnetoresistance have been measured over the temperature range from 78 to 300 ...
The results obtained show that the resin layer substrate which is convenient for the bismuth layer t...
Polycrystalline bismuth films were prepared by vacuum deposition onto mica substrates held at 423 K ...
Grain structure and the temperature dependences of resistivity, magnetoresistance, Hall and Seebeck ...
Die elektrische spezifische Widershinde und Hallkoeffizienten wurden bei Temperatur von 77 bis 300 K...
Includes bibliographical references.Includes illustrations.The surface adsorption potential for oxyg...
Many studies report an increase in charge carrier concentration in thin bismuth films as their thick...
We report on the electrical resistance and time‐dependent oxidation of thin (≲90 Å) semicontinuous b...
The electrical conductivity of thin bismuth films condensed on amorphous substrates is measured duri...
The resistivity of thin bismuth films grown on sapphire substrates has been measured as a function ...
We have studied the elastoresistance of bismuth thin films by measuring the transverse gauge factor ...
The semimetal character of bismuth and its large photon absorbing power make of this element the mos...
The structure of bismuth thin films prepared according to three different deposition techniques is i...
Un dispositif cryogenique a ete fabrique pour Ie mesure du pouvoir thermoelectrique et une etude pre...
This thesis investigates the properties of bismuth (Bi) nanostructures on a fundamental level and in...
The resistivity and magnetoresistance have been measured over the temperature range from 78 to 300 ...
The results obtained show that the resin layer substrate which is convenient for the bismuth layer t...
Polycrystalline bismuth films were prepared by vacuum deposition onto mica substrates held at 423 K ...
Grain structure and the temperature dependences of resistivity, magnetoresistance, Hall and Seebeck ...
Die elektrische spezifische Widershinde und Hallkoeffizienten wurden bei Temperatur von 77 bis 300 K...
Includes bibliographical references.Includes illustrations.The surface adsorption potential for oxyg...
Many studies report an increase in charge carrier concentration in thin bismuth films as their thick...
We report on the electrical resistance and time‐dependent oxidation of thin (≲90 Å) semicontinuous b...