Ion-sensitive field effect transistors with gates having a high density of nanopores were fabricated and employed to sense the neurotransmitter dopamine with high selectivity and detectability at micromolar range. The nanoporous structure of the gates was produced by applying a relatively simple anodizing process, which yielded a porous alumina layer with pores exhibiting a mean diameter ranging from 20 to 35 nm. Gate-source voltages of the transistors demonstrated a pH-dependence that was linear over a wide range and could be understood as changes in surface charges during protonation and deprotonation. The large surface area provided by the pores allowed the physical immobilization of tyrosinase, which is an enzyme that oxidizes dopamine,...
Because of their low operation voltage, high transconductance, and good aqueous compatibility, organ...
Because of their low operation voltage, high transconductance, and good aqueous compatibility, organ...
Solution-gated graphene transistors with graphene as both channel and gate electrodes are fabricated...
Ion-sensitive field effect transistors with gates having a high density of nanopores were fabricated...
Single-molecule methods have been rapidly developing with the appealing prospect of transforming c...
none4noNome progetto: Implantable Organic Nanoelectronics (IONE)We describe a potentiometric sensor ...
The development of molecular detection that allows rapid responses with high sensitivity and selecti...
We describe a potentiometric sensor based on Electrolyte-Gated Organic Field-Effect Transistor (EGOF...
We describe a potentiometric sensor based on Electrolyte-Gated Organic Field-Effect Transistor (EGOF...
We describe a potentiometric sensor based on Electrolyte-Gated Organic Field-Effect Transistor (EGOF...
We describe a potentiometric sensor based on Electrolyte-Gated Organic Field-Effect Transistor (EGOF...
We describe a potentiometric sensor based on Electrolyte-Gated Organic Field-Effect Transistor (EGOF...
[[abstract]]Open-gate ion-sensitive field-effect transistors (ISFET) are presented in this work to p...
[[abstract]]Open-gate ion-sensitive field-effect transistors (ISFETs) are presented in this paper to...
Because of their low operation voltage, high transconductance, and good aqueous compatibility, organ...
Because of their low operation voltage, high transconductance, and good aqueous compatibility, organ...
Because of their low operation voltage, high transconductance, and good aqueous compatibility, organ...
Solution-gated graphene transistors with graphene as both channel and gate electrodes are fabricated...
Ion-sensitive field effect transistors with gates having a high density of nanopores were fabricated...
Single-molecule methods have been rapidly developing with the appealing prospect of transforming c...
none4noNome progetto: Implantable Organic Nanoelectronics (IONE)We describe a potentiometric sensor ...
The development of molecular detection that allows rapid responses with high sensitivity and selecti...
We describe a potentiometric sensor based on Electrolyte-Gated Organic Field-Effect Transistor (EGOF...
We describe a potentiometric sensor based on Electrolyte-Gated Organic Field-Effect Transistor (EGOF...
We describe a potentiometric sensor based on Electrolyte-Gated Organic Field-Effect Transistor (EGOF...
We describe a potentiometric sensor based on Electrolyte-Gated Organic Field-Effect Transistor (EGOF...
We describe a potentiometric sensor based on Electrolyte-Gated Organic Field-Effect Transistor (EGOF...
[[abstract]]Open-gate ion-sensitive field-effect transistors (ISFET) are presented in this work to p...
[[abstract]]Open-gate ion-sensitive field-effect transistors (ISFETs) are presented in this paper to...
Because of their low operation voltage, high transconductance, and good aqueous compatibility, organ...
Because of their low operation voltage, high transconductance, and good aqueous compatibility, organ...
Because of their low operation voltage, high transconductance, and good aqueous compatibility, organ...
Solution-gated graphene transistors with graphene as both channel and gate electrodes are fabricated...