The segregation behaviour of oxygen at dislocations in silicon

The interaction between dislocations and oxygen atoms in silicon has been studied. The effect of immobilization of dislocations by the segregation of oxygen to the dislocation core (dislocation locking) has been investigated in the temperature range 400-800 °C and for different oxygen concentrations. It has been revealed that oxygen locking of dislocations shows three different regimes of behaviour. The experimental data have been used to determine the dislocation-oxygen interaction energy