We consider nonlinear charge transport of carriers in a photoexcited plasma in polar semiconductors. The diffusion and mobility kinetic coefficients in such conditions are obtained resorting to a nonequilibrium statistical thermodynamic approach. A generalized Einstein relation is derived for the nonequilibrium carriers (electrons and holes) for weak and intermediate electric field strengths. We discuss the effect of the irreversible evolution of the system and of the non-Ohmic behavior on such generalized Einstein relation.92864965
We have revisited the Einstein diffusion-mobility ratio, on the basis of the generalized Einstein re...
The main electronic feature of many nanocrystalline semiconductors and I organic materials is the pr...
We investigate the Einstein relation for the diffusivity-mobility ratio (DMR) for n-i-p-i and the mi...
We consider nonlinear charge transport of carriers in a photoexcited plasma in polar semiconductors....
Resorting to a theory of responses to thermal and mechanical perturbations, based on statistical irr...
A theoretical study of nonlinear charge transport in polar semiconductors is presented. It is based ...
The general response theory to thermal perturbations presented in the preceding paper is applied to ...
The question of how the evolution of the nonequilibrium state of a highly photoexcited plasma in pol...
The currently used generalized Einstein relation for degenerate semiconductors with isotropic nonpar...
Transport equations for semiconductors can be written with the diffusion term eD1Vn or eV(D2n), wher...
It is controversial whether energetic disorder in semiconductors is already sufficient to violate th...
It is controversial whether energetic disorder in semiconductors is already sufficient to violate th...
The applicability of the Einstein relation considering diffusivity and mobility of charge carriers w...
The generation and recombination kinetics of non-equilibrium charge carriers under illumination is s...
The so-called hot-phonon effect that accompanies the rapid relaxation processes in the photoinjected...
We have revisited the Einstein diffusion-mobility ratio, on the basis of the generalized Einstein re...
The main electronic feature of many nanocrystalline semiconductors and I organic materials is the pr...
We investigate the Einstein relation for the diffusivity-mobility ratio (DMR) for n-i-p-i and the mi...
We consider nonlinear charge transport of carriers in a photoexcited plasma in polar semiconductors....
Resorting to a theory of responses to thermal and mechanical perturbations, based on statistical irr...
A theoretical study of nonlinear charge transport in polar semiconductors is presented. It is based ...
The general response theory to thermal perturbations presented in the preceding paper is applied to ...
The question of how the evolution of the nonequilibrium state of a highly photoexcited plasma in pol...
The currently used generalized Einstein relation for degenerate semiconductors with isotropic nonpar...
Transport equations for semiconductors can be written with the diffusion term eD1Vn or eV(D2n), wher...
It is controversial whether energetic disorder in semiconductors is already sufficient to violate th...
It is controversial whether energetic disorder in semiconductors is already sufficient to violate th...
The applicability of the Einstein relation considering diffusivity and mobility of charge carriers w...
The generation and recombination kinetics of non-equilibrium charge carriers under illumination is s...
The so-called hot-phonon effect that accompanies the rapid relaxation processes in the photoinjected...
We have revisited the Einstein diffusion-mobility ratio, on the basis of the generalized Einstein re...
The main electronic feature of many nanocrystalline semiconductors and I organic materials is the pr...
We investigate the Einstein relation for the diffusivity-mobility ratio (DMR) for n-i-p-i and the mi...