Voltage controlled electron spin dynamics in resonant tunnelling devices

Galeti, H. V. A.
Brasil, M. J. S. P.
Gobato, Y. G.
Henini, M.

Open link

Publication date

November 2015

DOI

10.1088/0022-3727/47/16/165102

Publisher

Reino Unido

Journal

issn:0022-3727

Abstract

FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL E NÍVEL SUPERIORCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOWe investigate the electron spin dynamics in a p-type GaAs/AlAs resonant tunnelling device by measuring the time-and polarized-resolved photoluminescence (PL) from the GaAs quantum well under a high magnetic field (15 T). The voltage dependence of the PL transients have revealed various tunnelling processes with different time constants that give rise to distinct spin-polarized carriers injected into the double-barrier structure.471616FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL E NÍV...