Description of the method for quantitative determination of high densities of dislocations in monocrystals by means of autoradiography after "decoration" of the dislocations with radioactive tracers and following measurement of the density of the autoradiograms. The method is illustrated by example of germanium monocrystals. A comparison of these results with the same déterminations made by the application of metallographic microscopy after selective chemical etching is given.Description d'une méthode de la détermination quantitative des densités élevées des dislocations dans des monocristaux par emploi de l'autoradiographie après « décoration » des dislocations par atomes marqués suivie d'une mesure du taux de noircissement des autoradiogr...
Microscopic lattice defects such as point (single atom) defects, dislocation loops, and solute preci...
Une étude de la diffusion du gallium dans le germanium a été effectuée, à 680°C et 710°C, sur des éc...
It is challenging to quantify the geometrically necessary dislocation (GND) density at the nanoscale...
Description of the method for quantitative determination of high densities of dislocations in monocr...
- 1. Results of various methods of revealing dislocations on the surface of single crystals of metal...
Dislocations have been introduced in a monocrystal of germanium by successive compressions and the a...
International audienceA proof of concept of a new method for automatic characterization of the dislo...
Dislocation configurations in germanium single crystals developed during tensile deformation at 600℃...
La microscopie électronique à haute résolution permet de déterminer la largeur de dissociation des d...
The development pace of advanced electronics raises the demand for semiconductor single crystals and...
Publié suite à une conférence invitée au congrès : Symposium on Texture and Microstructure Analysis ...
The interpretation of electron micrographs becomes easier after filtering of the photographic and el...
The conditions most suitable for the welding of copper and silver specimens have been indicated; no ...
The dislocation arrays in german ium dendritic r ibbons are described. It is shown that there are th...
In order to predict the mechanical behavior of metallic materials, it is important to determine seve...
Microscopic lattice defects such as point (single atom) defects, dislocation loops, and solute preci...
Une étude de la diffusion du gallium dans le germanium a été effectuée, à 680°C et 710°C, sur des éc...
It is challenging to quantify the geometrically necessary dislocation (GND) density at the nanoscale...
Description of the method for quantitative determination of high densities of dislocations in monocr...
- 1. Results of various methods of revealing dislocations on the surface of single crystals of metal...
Dislocations have been introduced in a monocrystal of germanium by successive compressions and the a...
International audienceA proof of concept of a new method for automatic characterization of the dislo...
Dislocation configurations in germanium single crystals developed during tensile deformation at 600℃...
La microscopie électronique à haute résolution permet de déterminer la largeur de dissociation des d...
The development pace of advanced electronics raises the demand for semiconductor single crystals and...
Publié suite à une conférence invitée au congrès : Symposium on Texture and Microstructure Analysis ...
The interpretation of electron micrographs becomes easier after filtering of the photographic and el...
The conditions most suitable for the welding of copper and silver specimens have been indicated; no ...
The dislocation arrays in german ium dendritic r ibbons are described. It is shown that there are th...
In order to predict the mechanical behavior of metallic materials, it is important to determine seve...
Microscopic lattice defects such as point (single atom) defects, dislocation loops, and solute preci...
Une étude de la diffusion du gallium dans le germanium a été effectuée, à 680°C et 710°C, sur des éc...
It is challenging to quantify the geometrically necessary dislocation (GND) density at the nanoscale...