ELECTROREFLECTANCE STUDY OF THE E(1) AND E(0) OPTICAL-TRANSITIONS IN THIN GE/SI SUPERLATTICES

We report low temperature (77 K) electroreflectance measurements on a series of Ge(n) Si(m) strain-symmetrized superlattices. The results obtained for samples with n + m less-than-or-equal-to 10 are consistent with band structure calculations performed using the linear muffin-tin orbitals method as well as data from previous ellipsometric measurements. Results for superlattices with n + m greater-than-or-equal-to 20 can be explained by a straightforward extension of this conceptual scheme.861063764