Resonant magnetic tunnel junction at 0 degrees K: I-V characteristics and magnetoresistance

In this paper we analyze the main transport properties of a simple resonant magnetic tunnel junction (FM-IS-METAL-IS-FM structure) taking into account both elastic and magnon-assisted tunneling processes at low voltages and temperatures near 0degrees K. We show the possibility of magnetoresistance inversion as a consequence of inelastic processes and spin-dependent transmission coefficients. Resonant tunneling can also explain the effect of scattering by impurities located inside an insulating barrier. (C) 2005 American Institute of Physics.97