In this work we analyze the relation between the interface microroughness and the full width at half maximum (FWHM) of the photoluminescence (PL) spectra for a GaAs/Ga0.7Al0.3As multiple quantum well (QW) system. We show that, in spite of the complex correlation between the microscopic interface-defects parameters and the QW optical properties, the Singh and Bajaj model [Appl. Phys. Lett. 44, 805 (1984)] provides a good quantitative description of the excitonic PL-FWHM. [S0163-1829(99)01424-1].6031519152
Photoluminescence (PL) is used to study the interface properties of GaAs/AlGaAs quantum well (QW) he...
The localization dynamics of excitons within growth island terraces of a narrow GaAs singlequantum w...
The effects of thermal annealing on the interfaces of InGa(N)As/GaAs single quantum wells(SQWs) are ...
In this work we analyze the relation between the interface microroughness and the full width at half...
Photoluminescence from highly disordered GaAs quantum wells is studied in magnetic fields up to 50 T...
Photoluminescence from highly disordered GaAs quantum wells is studied in magnetic fields up to 50 T...
Photoluminescence from highly disordered GaAs quantum wells is studied in magnetic fields up to 50 T...
Neste trabalho estudamos as propriedades ópticas de excitons e de aceitadores de Be, confinados num ...
This work reports on the results of magnetophotoluminescence (MPL) measurements carried out in a sam...
This work reports on the results of magnetophotoluminescence (MPL) measurements carried out in a sam...
We have used photoluminescence spectroscopy to investigate the influence of interface roughness in G...
We have used photoluminescence spectroscopy to investigate the influence of interface roughness in G...
We have used photoluminescence spectroscopy to investigate the influence of interface roughness in G...
This work reports on the results of magnetophotoluminescence (MPL) measurements carried out in a sam...
The atomistic nature of heterointerfaces in III-V semiconductor-based quantum-well structures is inv...
Photoluminescence (PL) is used to study the interface properties of GaAs/AlGaAs quantum well (QW) he...
The localization dynamics of excitons within growth island terraces of a narrow GaAs singlequantum w...
The effects of thermal annealing on the interfaces of InGa(N)As/GaAs single quantum wells(SQWs) are ...
In this work we analyze the relation between the interface microroughness and the full width at half...
Photoluminescence from highly disordered GaAs quantum wells is studied in magnetic fields up to 50 T...
Photoluminescence from highly disordered GaAs quantum wells is studied in magnetic fields up to 50 T...
Photoluminescence from highly disordered GaAs quantum wells is studied in magnetic fields up to 50 T...
Neste trabalho estudamos as propriedades ópticas de excitons e de aceitadores de Be, confinados num ...
This work reports on the results of magnetophotoluminescence (MPL) measurements carried out in a sam...
This work reports on the results of magnetophotoluminescence (MPL) measurements carried out in a sam...
We have used photoluminescence spectroscopy to investigate the influence of interface roughness in G...
We have used photoluminescence spectroscopy to investigate the influence of interface roughness in G...
We have used photoluminescence spectroscopy to investigate the influence of interface roughness in G...
This work reports on the results of magnetophotoluminescence (MPL) measurements carried out in a sam...
The atomistic nature of heterointerfaces in III-V semiconductor-based quantum-well structures is inv...
Photoluminescence (PL) is used to study the interface properties of GaAs/AlGaAs quantum well (QW) he...
The localization dynamics of excitons within growth island terraces of a narrow GaAs singlequantum w...
The effects of thermal annealing on the interfaces of InGa(N)As/GaAs single quantum wells(SQWs) are ...