Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)The effects of a laser field on the conduction-electron effective Lande g factor in GaAs-Ga1-xAlxAs quantum wells and quantum-well wires under applied magnetic fields are studied within the effective-mass approximation. The interaction between the laser field and the semiconductor heterostructure is taken into account via a renormalization of the semiconductor energy gap and conduction-electron effective mass. Calculations are performed for the conduction-electron Lande factor and g-factor anisotropy by considering the non-parabolicity and anisotropy of the conduction band. Theoretical results are obtained as functions of the laser intensity, detuning and geometrical parameters of the low-dimensional semiconductor heterostructures, and indicate the possibility of manipulating and tuning the conduction-electron g factor in heterostructures by changing the detuning and laser-field intensity.4211COLCIENCIASCODI-Universidad de AntioquiaExcellence Center for Novel MaterialsConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Fundação de Amparo à Pesquisa do Estado do Rio de Janeiro (FAPERJ)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP