Quality of Fe3O4 Films Prepared by Plasma Assisted MOCVD

Fe3O4 films have been grown on Si substrates by plasma-assisted MOCVD using acetylacetonate iron complex as a gas source. Relationship between the deposition rate of the film and substrate temperature indicated a possibility that part of the source molecules may be decomposed into iron-oxide molecule and an intermediate by plasma applied in a diffusion process to the substrate surface. These reaction species allowed growth of Fe3O4 films with low carbon contamination and good surface morphology at low temperature of 400°C