The effects of applied electric fields on donor and exciton states confined in GaAs-(Ga,Al)As quantum wells are studied in the effective mass approximation and within the variational and fractional-dimensional space approaches. In the fractional-dimensional scheme, an effective isotropic medium is used to model the anisotropic Coulomb-bound state + quantum well + electric-field system, whereas a hydrogenic-like wave function is used in the variational procedure. Results are obtained for the binding energies, virial-theorem values, and scaling properties of the Coulomb-bound states under growth-direction applied electric fields. We show that a ground-state wave function assumed as a D-dimensional hydrogenic wave function leads to a virial-th...
We theoretically study the subband structure of single Si delta -doped GaAs inserted in a quantum we...
The binding energy of the donor in three different shaped triple graded GaAs-(Ga, Al)As quantum well...
The binding energy of the donor impurity in triple graded GaAs-(Ga,Al)As quantum wells is calculated...
We have used the variational and fractional-dimensional space approaches, in the effective-mass appr...
The variational and fractional-dimensional space approaches are used in a thorough study of the viri...
[[abstract]]The effects of a uniform electric field on the binding energies of excitons and the subb...
Direct and indirect excitons in GaAs-Ga(1-x)Al(x)As coupled double quantum wells, under growth-direc...
The effects of both hydrostatic pressure and electric fields applied perpendicular to the layers on ...
The effects of an applied electric field on subband energies and excitonic binding for a graded GaAl...
In this study, the interband optical transitions and the binding energy of an exciton in a GaAs/Ga1-...
The effects of an applied electric field on subband energies and excitonic binding for a graded GaAl...
The problem of a hydrogenic donor in a semiconductor double quantum well under a homogeneous electri...
We theoretically investigate the optical properties of the exciton confined in parabolic quantum-dot...
The donor binding energies in finite GaAs/GaxAl1-As-x quantum wells have been calculated by consider...
This dissertation is a theoretical treatment of the electric field dependence of optical properties ...
We theoretically study the subband structure of single Si delta -doped GaAs inserted in a quantum we...
The binding energy of the donor in three different shaped triple graded GaAs-(Ga, Al)As quantum well...
The binding energy of the donor impurity in triple graded GaAs-(Ga,Al)As quantum wells is calculated...
We have used the variational and fractional-dimensional space approaches, in the effective-mass appr...
The variational and fractional-dimensional space approaches are used in a thorough study of the viri...
[[abstract]]The effects of a uniform electric field on the binding energies of excitons and the subb...
Direct and indirect excitons in GaAs-Ga(1-x)Al(x)As coupled double quantum wells, under growth-direc...
The effects of both hydrostatic pressure and electric fields applied perpendicular to the layers on ...
The effects of an applied electric field on subband energies and excitonic binding for a graded GaAl...
In this study, the interband optical transitions and the binding energy of an exciton in a GaAs/Ga1-...
The effects of an applied electric field on subband energies and excitonic binding for a graded GaAl...
The problem of a hydrogenic donor in a semiconductor double quantum well under a homogeneous electri...
We theoretically investigate the optical properties of the exciton confined in parabolic quantum-dot...
The donor binding energies in finite GaAs/GaxAl1-As-x quantum wells have been calculated by consider...
This dissertation is a theoretical treatment of the electric field dependence of optical properties ...
We theoretically study the subband structure of single Si delta -doped GaAs inserted in a quantum we...
The binding energy of the donor in three different shaped triple graded GaAs-(Ga, Al)As quantum well...
The binding energy of the donor impurity in triple graded GaAs-(Ga,Al)As quantum wells is calculated...