Thin films of iron(di)sulfide pyrite, marcasite, and pyrrhotite have been prepared on glass substrates by low-pressure chemical vapor deposition (LPCVD) from iron(III)acetylacetonate (Fe(acac)3) and tert-butyl disulfide (TBDS), using a cold-wall LPCVD reactor. It is found that the temperature determines the crystalline phases of the films. Deposition temperatures of 350 and 375°C yield pure polycrystalline pyrite with an indirect and a direct band gap of 0.95 and 1.45 eV, respectively. By increasing the temperature up to 425°C, a mixture of pyrite, marcasite, and pyrrothite is formed, while between 425 and 450 °C mixtures of pyrite and pyrrhotite are obtained. Temperatures of 480 °C cause the formation of pyrrothite films
<div><p>A new approach to a single crystals growth of the iron sulfide phases of definite structure ...
FeS2 thin films have been deposited by using low cost chemical bath deposition technique. The films ...
Tin sulfide thin films have been laid down on glass substrates by APCVD of tin tetrabromide with hyd...
Thin films of iron disulfide have been prepared by Low-Pressure Chernical Vapor Deposition (LPCVD) f...
Thin films of pyrite have been prepared by low pressure metalorganic chemical vapour deposition LP ...
Resurgent interest in iron pyrite (FeS<sub>2</sub>) as an earth-abundant, nontoxic semiconductor for...
FeS2 pynte has been prepared by MOCVD in the temperature range from 200 to 600 C. As precursors F...
We report on a method to deposit iron pyrite thin films via chemical bath deposition of Fe-O-S thin ...
Deposition of thin films of iron oxide on glass has been carried out using a novel precursor, tris(t...
AbstractThe cubic FeS2 (Pyrite) films are prepared by chemical bath deposition method (CBD) at diffe...
Semiconducting pyrites were successfully deposited on glass substrates from Diethyldithiocarbamato i...
Iron layers were first obtained from iron pentacarbonyl in metallorganic chemical vapor deposition M...
Abstract. Fe2O3 thin films were obtained on glass substrates by the ultrasonic spray pyrolysis techn...
The effect of sulfur vapor pressure in preparing the FeS2 films has been discussed and some incongru...
Thin iron disulphide pyrite FeS2 films 5 100 nm were prepared by reactive d.c. magnetron sputt...
<div><p>A new approach to a single crystals growth of the iron sulfide phases of definite structure ...
FeS2 thin films have been deposited by using low cost chemical bath deposition technique. The films ...
Tin sulfide thin films have been laid down on glass substrates by APCVD of tin tetrabromide with hyd...
Thin films of iron disulfide have been prepared by Low-Pressure Chernical Vapor Deposition (LPCVD) f...
Thin films of pyrite have been prepared by low pressure metalorganic chemical vapour deposition LP ...
Resurgent interest in iron pyrite (FeS<sub>2</sub>) as an earth-abundant, nontoxic semiconductor for...
FeS2 pynte has been prepared by MOCVD in the temperature range from 200 to 600 C. As precursors F...
We report on a method to deposit iron pyrite thin films via chemical bath deposition of Fe-O-S thin ...
Deposition of thin films of iron oxide on glass has been carried out using a novel precursor, tris(t...
AbstractThe cubic FeS2 (Pyrite) films are prepared by chemical bath deposition method (CBD) at diffe...
Semiconducting pyrites were successfully deposited on glass substrates from Diethyldithiocarbamato i...
Iron layers were first obtained from iron pentacarbonyl in metallorganic chemical vapor deposition M...
Abstract. Fe2O3 thin films were obtained on glass substrates by the ultrasonic spray pyrolysis techn...
The effect of sulfur vapor pressure in preparing the FeS2 films has been discussed and some incongru...
Thin iron disulphide pyrite FeS2 films 5 100 nm were prepared by reactive d.c. magnetron sputt...
<div><p>A new approach to a single crystals growth of the iron sulfide phases of definite structure ...
FeS2 thin films have been deposited by using low cost chemical bath deposition technique. The films ...
Tin sulfide thin films have been laid down on glass substrates by APCVD of tin tetrabromide with hyd...