We present an analysis of the nonequilibrium thermodynamics and, mainly, a response function theory for the study of optical properties in ultrafast-spectroscopy pump-probe experiments. These experiments give rise to the formation of a photoinjected plasma in semiconductors in far-from-equilibrium conditions. The dissipative processes that evolve in this medium greatly influence optical and transport properties. The theory is centred on the application to the study of the phenomenon of modulated changes in the time-resolved reflectivity spectrum. In particular we show that this phenomenon consists in the coupled effect of coherent-LO-phonon and carrier-charge-density motions, which are driven through the action of the coherent photons of th...
Decoherence is central to our understanding of the transition from the quantum to the classical worl...
The authors review the physics of ultrafast dynamics in semiconductors and their heterostructures, i...
Detailed understanding of basic scattering mechanisms of high density and highly energetic carriers ...
The so-called hot-phonon effect that accompanies the rapid relaxation processes in the photoinjected...
Zubarev's nonequilibrium statistical thermodynamic method is applied to the study of the time evolut...
We consider the ultrafast kinetics of evolution of optical phonons in a photoinjected highly excited...
The spectrum of elementary excitations in the nonequilibrium state of a semiconductor under high lev...
The nonequilibrium thermodynamic state of a highly excited plasma in direct-gap polar semiconductors...
The present paper illustrates a series of theoretical results on nonequilibrium phonon effects based...
A theory of Raman scattering from a semiconductor in the presence of nonequilibrium phonons and carr...
The present paper illustrates a series of theoretical results on nonequilibrium phonon effects based...
The techniques of phonon imaging are used in conjunction with photoluminescence measurements to dete...
The techniques of phonon imaging are used in conjunction with photoluminescence measurements to dete...
We analize the stability of the nonlinear nonequilibrium thermodynamic steady state of a double comp...
Decoherence is central to our understanding of the transition from the quantum to the classical worl...
Decoherence is central to our understanding of the transition from the quantum to the classical worl...
The authors review the physics of ultrafast dynamics in semiconductors and their heterostructures, i...
Detailed understanding of basic scattering mechanisms of high density and highly energetic carriers ...
The so-called hot-phonon effect that accompanies the rapid relaxation processes in the photoinjected...
Zubarev's nonequilibrium statistical thermodynamic method is applied to the study of the time evolut...
We consider the ultrafast kinetics of evolution of optical phonons in a photoinjected highly excited...
The spectrum of elementary excitations in the nonequilibrium state of a semiconductor under high lev...
The nonequilibrium thermodynamic state of a highly excited plasma in direct-gap polar semiconductors...
The present paper illustrates a series of theoretical results on nonequilibrium phonon effects based...
A theory of Raman scattering from a semiconductor in the presence of nonequilibrium phonons and carr...
The present paper illustrates a series of theoretical results on nonequilibrium phonon effects based...
The techniques of phonon imaging are used in conjunction with photoluminescence measurements to dete...
The techniques of phonon imaging are used in conjunction with photoluminescence measurements to dete...
We analize the stability of the nonlinear nonequilibrium thermodynamic steady state of a double comp...
Decoherence is central to our understanding of the transition from the quantum to the classical worl...
Decoherence is central to our understanding of the transition from the quantum to the classical worl...
The authors review the physics of ultrafast dynamics in semiconductors and their heterostructures, i...
Detailed understanding of basic scattering mechanisms of high density and highly energetic carriers ...