Low temperature operation of graded-channel SOI nMOSFETs for analog applications
- M.A. Pavanello
- P.G. Der Agopian1
- J.A. Martino
- D. Flandre
DOIAbstract
We present in this work is an analysis of the low temperature operation of Graded-Channel fully-depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications. This analysis is supported by a comparison between the results obtained by MEDICI numerical bidimensional simulations and measurements. The Graded-Channel transistor presents higher Early voltage and transconductance at 100 K if compared to the conventional fullydepleted SOI nMOSFET.
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