Time resolved luminescence measurements under resonant excitation were performed at 10 K on the free exciton in very high quality GaAs-AlAs quantum wells. At resonance, the luminescence intensity is increased by two orders of magnitude, and the decay is short. The radiative lifetime of the excitons in the radiant states is about 18 ps in agreement with the theory of Hanamura and Andréani
We report a systematic study of exciton binding energies and lifetimes in InGaAs/GaAs quantum wells....
We report a systematic study of exciton binding energies and lifetimes in InGaAs/GaAs quantum wells....
Temperature dependent risetimes of exciton luminescence in different size quantum wells are obtained...
Time resolved luminescence measurements under resonant excitation were performed at 10 K on the free...
We study the dynamics of the charged and neutral excitons in a modulation-doped GaAs quantum well by...
719-722In GaAs/AJGaAs quantum well structures, the confinement of electrons as well as, holes in GaA...
The exciton population in a higher subband of GaAs quantum wells, below the free carrier continuum, ...
The dependence of the excitonic lifetime on the well width has been studied in conventional GaAs/AlG...
We have studied the radiative excitonic lifetime as a function of the well width in GaAs/GaAlAs quan...
The excitonic population lifetime and its temperature dependence is measured in nanometer-scale quan...
The excitonic population lifetime and its temperature dependence is measured in nanometer-scale quan...
The excitonic population lifetime and its temperature dependence is measured in nanometer-scale quan...
We present a comprehensive investigation of the dynamics of resonantly excited nonthermal excitons i...
We report a systematic study of exciton binding energies and lifetimes in InGaAs/GaAs quantum wells....
The photoluminescence decay times in GaAs/AlGaAs multi quantum well structures with layer thickness ...
We report a systematic study of exciton binding energies and lifetimes in InGaAs/GaAs quantum wells....
We report a systematic study of exciton binding energies and lifetimes in InGaAs/GaAs quantum wells....
Temperature dependent risetimes of exciton luminescence in different size quantum wells are obtained...
Time resolved luminescence measurements under resonant excitation were performed at 10 K on the free...
We study the dynamics of the charged and neutral excitons in a modulation-doped GaAs quantum well by...
719-722In GaAs/AJGaAs quantum well structures, the confinement of electrons as well as, holes in GaA...
The exciton population in a higher subband of GaAs quantum wells, below the free carrier continuum, ...
The dependence of the excitonic lifetime on the well width has been studied in conventional GaAs/AlG...
We have studied the radiative excitonic lifetime as a function of the well width in GaAs/GaAlAs quan...
The excitonic population lifetime and its temperature dependence is measured in nanometer-scale quan...
The excitonic population lifetime and its temperature dependence is measured in nanometer-scale quan...
The excitonic population lifetime and its temperature dependence is measured in nanometer-scale quan...
We present a comprehensive investigation of the dynamics of resonantly excited nonthermal excitons i...
We report a systematic study of exciton binding energies and lifetimes in InGaAs/GaAs quantum wells....
The photoluminescence decay times in GaAs/AlGaAs multi quantum well structures with layer thickness ...
We report a systematic study of exciton binding energies and lifetimes in InGaAs/GaAs quantum wells....
We report a systematic study of exciton binding energies and lifetimes in InGaAs/GaAs quantum wells....
Temperature dependent risetimes of exciton luminescence in different size quantum wells are obtained...
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