Microwave impedance characteristics of the double velocity IMPATT diode structure made of Si/SiC heterostructures are examined
For development of MMIC amplifier using GaAs HEMT and HBT devices developed in-house, it is essentia...
In the present work, electrochemical impedance measurements in combination with conductance measurem...
The electrical behavior of 3C, 4H, and 6H SiC MESFETs has been simulated using an analytical two reg...
Abstract:- On the basis of the numerical model that includes precise electrical and thermal sub-mode...
Silicon carbide (SiC), due to its thermal and electronic properties, has long been considered an exc...
Modeling and analysis of microwave characteristics of HBTs have been performed. The physics-based mo...
Impact-Ionization-Avalanche-Transit-Time (IMPATT) diodes have been used for RF power generation at f...
There are two points that should be noted. First, in the thermal resistance calculations it is assum...
Abstract:- One of the main problems of high-power microwave semiconductor electronics is design and ...
This paper proposes a 6H-materials silicon carbide (SiC)/gallium nitride (GaN) heterogeneous p-n str...
Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and...
We have fabricated the edge junction by using epitaxial multilevel deposition technique. The dc and...
The features of the formation of microwave GaAs structures are considered and a set of studies is ca...
Effect of junction temperature on the DC and high-frequency properties of W-band double drift (DDR) ...
The objective of these studies is to develop improved signal and noise models for solid-state microw...
For development of MMIC amplifier using GaAs HEMT and HBT devices developed in-house, it is essentia...
In the present work, electrochemical impedance measurements in combination with conductance measurem...
The electrical behavior of 3C, 4H, and 6H SiC MESFETs has been simulated using an analytical two reg...
Abstract:- On the basis of the numerical model that includes precise electrical and thermal sub-mode...
Silicon carbide (SiC), due to its thermal and electronic properties, has long been considered an exc...
Modeling and analysis of microwave characteristics of HBTs have been performed. The physics-based mo...
Impact-Ionization-Avalanche-Transit-Time (IMPATT) diodes have been used for RF power generation at f...
There are two points that should be noted. First, in the thermal resistance calculations it is assum...
Abstract:- One of the main problems of high-power microwave semiconductor electronics is design and ...
This paper proposes a 6H-materials silicon carbide (SiC)/gallium nitride (GaN) heterogeneous p-n str...
Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and...
We have fabricated the edge junction by using epitaxial multilevel deposition technique. The dc and...
The features of the formation of microwave GaAs structures are considered and a set of studies is ca...
Effect of junction temperature on the DC and high-frequency properties of W-band double drift (DDR) ...
The objective of these studies is to develop improved signal and noise models for solid-state microw...
For development of MMIC amplifier using GaAs HEMT and HBT devices developed in-house, it is essentia...
In the present work, electrochemical impedance measurements in combination with conductance measurem...
The electrical behavior of 3C, 4H, and 6H SiC MESFETs has been simulated using an analytical two reg...
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