Ni-p, Ni-b And Sio2 As Materials For Hard Mask In Deep Silicon Etching For Mems Fabrication Using Icp Reactor

Ni-P, Ni-B and SiO2 films were used as hard mask materials in Si etching using a high-density inductively coupled plasma (ICP) reactor for MEMS fabrication. The Ni-P and Ni-B films were deposited using an electroless method, and the SiO2 film was thermally grown in a conventional furnace. Two etching processes were used to characterize the masks. The first uses SF 6/Ar gas mixture varying bias power and process time, and the second is a Bosch like process, using C4F8 as a passivation gas. The Ni-P mask showed the highest resistance to etching, being applicable in Si deep etching (>100μm); while the SiO2 mask was found to be less resistive, especially under strong ion bombardment (high bias power). The Ni-B mask was found to be highly porous, resulting in formation of micropillars during ecthing, which may be interesting for some apllications such as sensors. © The Electrochemical Society.231173180Rhee, H., Kwon, H., Kim, C.-K., Kim, H., Yoo, J., Kim, Y.W., (2008) J. Vac. Sci. Technol. B, 26 (2), p. 576Kok, K.W., Yoo, W.J., Sooriakumar, K., Pan, J.S., Lee, E.Y., (2002) J. Vac. Sci. Technol. B, 20 (5), p. 1878Darnon, M., Chevolleau, T., Eon, D., Bouyssou, R., Pelissier, B., Vallier, L., Joubert, O., Torres, J., (2008) Microelectronic Enginnering, 85, p. 2226Ceriotti, L., Weible, K., De Rooij, N.F., Verpoorte, E., (2003) Microelectronic Engineering, 67-68, p. 865Tanaka, S., Rajanna, K., Abe, T., Esashi, M., (2001) J. Vac. Sci. Technol. B, 19 (6), p. 2173Nunes, A.M., Moshkalev, S.A., Flacker, A., Tatsch, P.J., Besseler, E., (2008) ECS Transactions, 14 (1), p. 403Zou, Y.S., Yang, Y., Zhang, W.J., Chong, Y.M., He, B., Bello, I., Lee, T., (2008) Applied Physics Letters, 92, p. 053105Kim, M.J., Lee, J.S., Kim, S.K., Yeom, G.Y., Yoo, J.-B., Park, C.-Y., (2005) Thin Solid Films, 475, p. 4