It is shown that the nature and extent of wavefunction localisation of miniband states in an external electric field can be markedly different for finite superlattice structures, compared with infinite and is dependent on the strength of interaction between the initial electron (and hole) miniband states. The question of blue shifts and excitonic effects is described and possible device applications for strongly interacting superlattices structures are discussed
The effects of an applied bias in the longitudinal or growth direction on four In$\sb{\rm x}$Ga$\sb{...
Semiconductor superlattices are artificial crystals with a periodicity much larger than lattice cons...
International audienceIn 1970, Esaki and Tsu invented the concept of semiconductor superlattices for...
The electric-field dependence of the Stark-ladder structure of a strongly coupled GaAs/AlAs double-p...
We report on novel interaction phenomena between different Stark ladders in a strongly coupled GaAs-...
The electric field dependent absorption properties of p-i-n diodes containing GaAs/AlAs superlattice...
The application of an external electric field parallel to the growth axis of a superlattice quantize...
We have investigated p-i-n diode structures containing GaAs/AlAs superlattices with extremely thin (...
We have studied Stark-ladder transitions and their oscillator strengths in GaAs/AlAs superlattices w...
We compare experimental and theoretical electroabsorption spectra of strongly coupled GaAs/AlAs supe...
We have studied the effect of an electric field absorption properties of superlattices containing tw...
In this paper, we study the Wannier-Stark ladder by carrying out numerical calculations on a multipl...
The external-electric-field effect and the doping effect on a modulation-doped finite-length GaAs/Al...
We review the basic features of interminiband absorption in superlattices, focussing on the joint de...
We have investigated resonant coupling between coupled Stark ladder states in a double-period GaAs/A...
The effects of an applied bias in the longitudinal or growth direction on four In$\sb{\rm x}$Ga$\sb{...
Semiconductor superlattices are artificial crystals with a periodicity much larger than lattice cons...
International audienceIn 1970, Esaki and Tsu invented the concept of semiconductor superlattices for...
The electric-field dependence of the Stark-ladder structure of a strongly coupled GaAs/AlAs double-p...
We report on novel interaction phenomena between different Stark ladders in a strongly coupled GaAs-...
The electric field dependent absorption properties of p-i-n diodes containing GaAs/AlAs superlattice...
The application of an external electric field parallel to the growth axis of a superlattice quantize...
We have investigated p-i-n diode structures containing GaAs/AlAs superlattices with extremely thin (...
We have studied Stark-ladder transitions and their oscillator strengths in GaAs/AlAs superlattices w...
We compare experimental and theoretical electroabsorption spectra of strongly coupled GaAs/AlAs supe...
We have studied the effect of an electric field absorption properties of superlattices containing tw...
In this paper, we study the Wannier-Stark ladder by carrying out numerical calculations on a multipl...
The external-electric-field effect and the doping effect on a modulation-doped finite-length GaAs/Al...
We review the basic features of interminiband absorption in superlattices, focussing on the joint de...
We have investigated resonant coupling between coupled Stark ladder states in a double-period GaAs/A...
The effects of an applied bias in the longitudinal or growth direction on four In$\sb{\rm x}$Ga$\sb{...
Semiconductor superlattices are artificial crystals with a periodicity much larger than lattice cons...
International audienceIn 1970, Esaki and Tsu invented the concept of semiconductor superlattices for...