Giant band bending and interface formation of Cs/InAs(110) at room temperature

We show by synchrotron radiation core level photoemission spectroscopy that minute amounts of Cs induce at room temperature a giant jump of the Fermi level into the conduction band when deposited on well-cleaved InAs(110) surfaces. This stage corresponds to a single Cs adsorption site. When more Cs is added a new adsorption site appears while correlatively the band bending gradually decreases. The complete interface formation (electronic structure, chemistry) is followed up to saturation at one monolayer and analyzed in terms of the present models of Schottky barrier formation