Band-edge Modifications Due To Photogenerated Carriers In Single P-type δ-doped Gaas Layers

The photogenerated carrier-induced band-edge modifications of beryllium single δ-doped GaAs layers comprising a two-dimensional hole gas (2DHG) were investigated by means of photoluminescence, selective photoluminescence, and photoluminescence excitation spectroscopies. The results show direct evidence for a photoinduced electron confinement effect, which strongly enhances the radiative-recombination probability between electrons and holes of the 2DHG at low temperatures. © 1999 The American Physical Society.59746344637Schubert, E.F., (1994) Epitaxial Microstructures, 40, p. 1. , edited by A. C. Gossard, Semiconductors and Semimetals Academic, New YorkEnderlein, R., Sipahi, G.M., Scolfaro, L.M.R., Leite, J.R., Diaz, I.F.L., (1994) Mater. Sci. Eng., B, 35, p. 396Sipahi, G.M., Enderlein, R., Scolfaro, L.M.R., Leite, J.R., (1996) Phys. Rev. B, 53, p. 9930Buyanova, I.A., Chen, W.M., Henry, A., Ni, W.-X., Hansson, G.V., Monemar, B., (1996) Phys. Rev. B, 53, p. 9587Sipahi, G.M., Enderlein, R., Scolfaro, L.M.R., Leite, J.R., Da Silva, E.C.F., Levine, A., (1998) Phys. Rev. B, 57, p. 9168Gilinsky, A.M., Zhuravlev, K.S., Lubyshev, D.I., Migal, V.P., Preobrashenskii, V.V., Semiagin, B.R., (1991) Superlattices Microstruct., 10, p. 399Estimated from Hall measurements on molecular beam epitaxy grown bulk GaAsAshen, D.J., Dean, P.J., Hurle, D.T.J., Mullin, J.B., White, A.M., Greene, P.D., (1975) J. Phys. Chem. Solids, 36, p. 1041Richards, D., Wagner, J., Schneider, H., Hendorfer, G., Maier, M., Fischer, A., Ploog, K., (1993) Phys. Rev. B, 47, p. 962