DOI Publisher
EDP SciencesAbstract
Recent advances in the growth of III-V and II-VI semiconductor materials by MOVPE have been greatly facilitated by the development of new metalorganic precursors. The use of trimethylamine alane (AlH3 (NMe3) ) has allowed the growth of AlGaAs with greatly lowered carbon and oxygen levels, whilst adducts such as Me2ZnNEt3 have served to eliminate a formerly severe prereaction during growth of ZnSe and ZnS. A number of these recent developments are critically reviewed and possible growth mechanisms are discussed
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