Surface LIII absorption and UV photoemission experiments are reported for the characterization of the interface between deposited Yb (0.4-10 nm) and a Pd (111) surface. A schematic description of interface formation is proposed combining the two types of experiment and taking advantage of Yb valence sensitivity to the local environment
We present Si 2p and Ba 4d photoemission with synchrotron radiation from Si(111)-Ba interface at inc...
We report the first photoemission studies of the electronic structure at the interface between Ge(11...
The bulk and surface valence v− of Yb is investigated for YbPdx intermetallic compounds (with ...
Nous avons utilisé des mesures de seuil LIII de surface et de photoémission UV pour étudier l'état d...
A photoemission study of Yb/GaP(110) interface at early stage of formation is presented, showing st...
The formation of the Yb-Si(111) interface has been monitored by photoemission at a synchrotron beam ...
Yb chemisorption at monolayer coverages onto Si substrates is the precursor stage of Yb/Si interface...
We report the results of a preliminary synchrotron radiation photoemission and Auger experiment on t...
We present extensive results on synchrotron-radiation angle-integrated photoemission from Si(111) su...
The authors present a synchrotron radiation photoemission results from Si(111) with increasing Pd co...
We have studied the interface formation between Sb(111) surfaces and evaporated aluminum with photo ...
Study of local structure of binary surface with usage of ultra-thin film of cerium deposited on a Pd...
The Pt/GaP(110) interface has been studied by core and valence level photoemission using synchrotron...
We present the results of a joint experimental and theoretical investigation of the electronic prope...
Abstract The fabrication of small-scale electronics usually involves the integration of different fu...
We present Si 2p and Ba 4d photoemission with synchrotron radiation from Si(111)-Ba interface at inc...
We report the first photoemission studies of the electronic structure at the interface between Ge(11...
The bulk and surface valence v− of Yb is investigated for YbPdx intermetallic compounds (with ...
Nous avons utilisé des mesures de seuil LIII de surface et de photoémission UV pour étudier l'état d...
A photoemission study of Yb/GaP(110) interface at early stage of formation is presented, showing st...
The formation of the Yb-Si(111) interface has been monitored by photoemission at a synchrotron beam ...
Yb chemisorption at monolayer coverages onto Si substrates is the precursor stage of Yb/Si interface...
We report the results of a preliminary synchrotron radiation photoemission and Auger experiment on t...
We present extensive results on synchrotron-radiation angle-integrated photoemission from Si(111) su...
The authors present a synchrotron radiation photoemission results from Si(111) with increasing Pd co...
We have studied the interface formation between Sb(111) surfaces and evaporated aluminum with photo ...
Study of local structure of binary surface with usage of ultra-thin film of cerium deposited on a Pd...
The Pt/GaP(110) interface has been studied by core and valence level photoemission using synchrotron...
We present the results of a joint experimental and theoretical investigation of the electronic prope...
Abstract The fabrication of small-scale electronics usually involves the integration of different fu...
We present Si 2p and Ba 4d photoemission with synchrotron radiation from Si(111)-Ba interface at inc...
We report the first photoemission studies of the electronic structure at the interface between Ge(11...
The bulk and surface valence v− of Yb is investigated for YbPdx intermetallic compounds (with ...