RADIATION-INDUCED DEFECTS FORMATION IN CHALCOGENIDE GLASSES

High-energy (2Mev) electron irradiation may produce excess density of valence-alternation pairs (VAP's) in chalcogenide glasses. Relativistic electron energy losses and non-equilibrium density of radiation-induced "atomic shift" defects in vitreous As2S3 and As2S3 are calculated. Radiation-induced defects formation scheme is proposed and compared with positron annihilation data. It is shown that radiation-induced defects may cause essential changes in electrical and optical properties of chalcogenide glasses