MINORITY CARRIER TRANSPORT IN DEPLETION LAYERS OF n-i-p a-Si : H SOLAR CELLS

Transport properties of electrons and holes in i layers of pin a-Si solar cells are important in determining the current collection efficiency of these cells. In this paper, we describe a new technique for measuring the (μτ) product of minority carriers in the undoped layer of an a-Si : H cell. It is shown that the transport properties in depletion layers of solar cells can be very different from the transport in virgin i layers, and that under certain circumstances, electrons can become the minority carriers, in strong contrast to virgin i layers, where holes are the minority carriers