Interface Roughness Effects In Resonant Tunneling Structures

We have measured I(V) characteristics and photoluminescence spectra of GaAs/In0.1Ga0.9As/AlAs double harrier diode with interface roughness and island formation in the quantum well (QW). Typical QW photolummescence (PL) and photoluminescence excitation (PLE) spectra present a splitting for the fundamental transition due to island formation in the QW. The position, intensity and linewidth of these lines are investigated as a function of applied bias photoexcitation intensity and temperature.1641137140Dietze, W.T., Darling, B., (1996) Phys. Rev. B, 53, p. 3925Skolnick, M.S., Simmonds, P.E., Hayes, D.G., Higgs, A.W., Smith, G.W., Pitt, A.D., Whitehouse, C.R., Hughes, O.H., (1990) Phys. Rev., 42, p. 3069Skolnick, M.S., Hayes, D.G., Simmonds, P.E., Higgs, A.W., Smith, G.W., Huchinson, H.J., Whitehouse, C.R., Halliday, D.P., (1990) Phys. Rev., 41, p. 10754Wang, T.H., Mei, X.B., Jiang, C., Uang, Y., Zhou, J.M., Yang, G.Z., (1993) Appl. Phys. Lett., 62, p. 1149Klann, R., Grahn, T., Fujiwara, F., (1995) Phys. Rev. B, 51, p. 10232Inarrea, J., Platero, G., (1996) Europhys. Lett., 33, p. 47