GROWTH CONTROL OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICE BY THE RHEED INTENSITY OSCILLATIONS

T. SAKAMOTO
K. SAKAMOTO
H. OYANAGI
T. YAO
T. ISHIGURO
S . NAGAO
G. HASHIGUCHI
K. KUNIYOSHI
Y. BANDO

DOI

10.1051/jphyscol:1987571

Publisher

EDP Sciences

Abstract

Reflection high-energy electron diffraction intensity oscillations are observed during the heteroepitaxy of GexSi1-x/Si strained structure. The oscillations are found to be strongly dependent on the Ge mole fraction. GexSi1-x/Si superlattice structures with a monatomic-layer-precision are grown by the phase-locked epitaxy method

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GROWTH CONTROL OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICE BY THE RHEED INTENSITY OSCILLATIONS

Abstract

Extracted data

GROWTH CONTROL OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICE BY THE RHEED INTENSITY OSCILLATIONS

Abstract

Extracted data

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