ELECTRICAL PROPERTIES AND PHOTOLUMINESCENCE OF AMORPHOUS SILICON
- X.B. Liao
- G.L. Kong
- X.R. Yang
- P.D. Wang
- Y.Q. Chao
- Z.M. Chen
- C.L. Liu
DOI Publisher
EDP SciencesAbstract
The temperature dependence of conductivity, photoluminescence and ion-implantation doping effect of glow discharge (GD) and low pressure CVD a-Si films have been investigated. Post-hydrogenation significantly reduces the gap state density of LPCVD a-Si. Phosphorus and boron ion-implantation show that LPCVD a-Si has a higher doping efficiency than GD samples, reaching a maximum R.T. conductivity of 0.3 Ω-1 cm-1. Two peaks were observed in the luminescence spectrum of GD a-Si films and the origin of the peaks is discussed
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