HOT CARRIER SENSITIVITY OF MOSFET's EXPOSED TO SYNCHROTRON-LIGHT

The influence of synchrotron-light irradiation for p- and n-channel MOSFET's on their sensitivity to hot carrier degradation was investigated. The radiation induces additional interface states and a positive oxide charge. Annealing at 450°C reduces the interface state density to its initial value but not the oxide charge. A hot carrier stress can compensate this remaining charge by trapping electrons. This effect produces an enhanced shift of the threshold voltage compared to non-irradiated devices. After compensating all of the charge due to the irradiation the devices have a degradation behavior comparable to the non irradiated ones