ELECTRON MICROSCOPICAL STUDY OF OXYGEN RELATED DEFECTS IN CZOCHRALSKI SILICON

Dopant, Defects and Oxygen Interaction In Mev Implanted Czochralski Silicon

A., Laferla
G., Galvagno
V., Raineri
F., Priolo
Carnera, Alberto
Gasparotto, Andrea
E., Rimini

January 1995

An oxygen precipitation phenomenon was evidenced on high energy implanted Czochralski silicon sample...

Defect states in Czochalski p-type silicon: the role of oxygen and dislocations

A. Castaldini
D. Cavalcoli
A. Cavallini
S. Pizzini

January 2005

This contribution reports the study, by junction spectroscopies, of electronic states induced by the...

Characterization and Elimination of Defects in Oxide Layers Grown on Czochralski Silicon Substrates

Manabu Itsumi

September 2016

Smal l defects in Czochralski silicon substrates are responsible for defect generation in oxide laye...

ELECTRON MICROSCOPICAL STUDY OF OXYGEN RELATED DEFECTS IN CZOCHRALSKI SILICON

H. Bender
C. Claeys
J. Van Landuyt
G. Declerck
S. Amelinckx
R. Van Overstraeten

Les défauts créés par un traitement à basse température du silicium Czochralski avec une teneur élev...

Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods

A. Misiuk
B. Surma
J. Bak-Misiuk

July 2004

Defects in oxygen-containing Czochralski silicon (Cz-Si) subjected to 2-steps pre-annealing at 720–...

Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods

A. Misiuk
B. Surma
J. Bak-Misiuk

July 2004

Defects in oxygen-containing Czochralski silicon (Cz-Si) subjected to 2-steps pre-annealing at 720–...

Heat-Treatment Studies of Oxygen-Defect-Impurity Interactions in Silicon

John W. Cleland

September 2016

It is shown by electrical property measurements that extended annealing at 450 ~ introduced-> 101...

The production of vacancy-oxygen defects in electron-irradiated Cz-Si initially treated at high temperatures and high pressures

A Andrianakis
C A Londos
A Misiuk
V V Emtsev
G A Oganesyan
H Ohyama

March 2020

Abstract. We report studies of defects in electron-irradiated Czochralski-grown silicon (Cz-Si) subj...

Defect engineering in Czochralski silicon by electron irradiation at different temperatures

Lindström, J L
Murin, LI
Hallberg, T
Markevich, VP
Svensson, BG
Kleverman, Mats
Hermansson, J

January 2002

Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electron...

Role of oxygen on the implantation related residual defects in silicon

Jianqing, Wen
Evans-Freeman, J.
Peaker, A. R.
Zhang, J. P.
Hemment, Peter L. F.
Marsh, C. D.
Booker, G. R.

October 2017

The role of oxygen concentration on the formation/evolution of residual defects in implanted and rap...

N-type Czochralski silicon ingots - Oxygen-related defects in the last solid fraction

Haave, Bjørn

January 2016

The focus of this master's thesis has been the formation of oxygen-related defects in the last 10 cm...

Study of Flow Pattern Defects and Oxidation Induced Stacking Faults in Czochralski Single-Crystal Silicon Growth

Chao-Chun Yen
Anoop Kumar Singh
Yi-Min Chung
Hsin-Yu Chou
Dong-Sing Wuu

February 2023

This paper emphasizes that the furnace pressure, crucible rotation, and pulling rate have important ...

Microstructural Analysis of Epitaxial Layer Defects in Si Wafer

January 2010

Abstract The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by ...

Defect states in Czochalski p-type silicon: the role of oxygen and dislocations

A. Castaldini
D. Cavalcoli
A. Cavallini
S. Pizzini

January 2005

This contribution reports the study, by junction spectroscopies, of electronic states induced by the...

Defect states in Czochalski p-type silicon: the role of oxygen and dislocations

A. Castaldini
D. Cavalcoli
A. Cavallini
S. Pizzini

January 2005

This contribution reports the study, by junction spectroscopies, of electronic states induced by the...

Dopant, Defects and Oxygen Interaction In Mev Implanted Czochralski Silicon

A., Laferla
G., Galvagno
V., Raineri
F., Priolo
Carnera, Alberto
Gasparotto, Andrea
E., Rimini

January 1995

An oxygen precipitation phenomenon was evidenced on high energy implanted Czochralski silicon sample...

Defect states in Czochalski p-type silicon: the role of oxygen and dislocations

A. Castaldini
D. Cavalcoli
A. Cavallini
S. Pizzini

January 2005

This contribution reports the study, by junction spectroscopies, of electronic states induced by the...

Characterization and Elimination of Defects in Oxide Layers Grown on Czochralski Silicon Substrates

Manabu Itsumi

September 2016

Smal l defects in Czochralski silicon substrates are responsible for defect generation in oxide laye...

ELECTRON MICROSCOPICAL STUDY OF OXYGEN RELATED DEFECTS IN CZOCHRALSKI SILICON

H. Bender
C. Claeys
J. Van Landuyt
G. Declerck
S. Amelinckx
R. Van Overstraeten

Les défauts créés par un traitement à basse température du silicium Czochralski avec une teneur élev...

Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods

A. Misiuk
B. Surma
J. Bak-Misiuk

July 2004

Defects in oxygen-containing Czochralski silicon (Cz-Si) subjected to 2-steps pre-annealing at 720–...

Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods

A. Misiuk
B. Surma
J. Bak-Misiuk

July 2004

Defects in oxygen-containing Czochralski silicon (Cz-Si) subjected to 2-steps pre-annealing at 720–...

Heat-Treatment Studies of Oxygen-Defect-Impurity Interactions in Silicon

John W. Cleland

September 2016

It is shown by electrical property measurements that extended annealing at 450 ~ introduced-> 101...

The production of vacancy-oxygen defects in electron-irradiated Cz-Si initially treated at high temperatures and high pressures

A Andrianakis
C A Londos
A Misiuk
V V Emtsev
G A Oganesyan
H Ohyama

March 2020

Abstract. We report studies of defects in electron-irradiated Czochralski-grown silicon (Cz-Si) subj...

Defect engineering in Czochralski silicon by electron irradiation at different temperatures

Lindström, J L
Murin, LI
Hallberg, T
Markevich, VP
Svensson, BG
Kleverman, Mats
Hermansson, J

January 2002

Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electron...

Role of oxygen on the implantation related residual defects in silicon

Jianqing, Wen
Evans-Freeman, J.
Peaker, A. R.
Zhang, J. P.
Hemment, Peter L. F.
Marsh, C. D.
Booker, G. R.

October 2017

The role of oxygen concentration on the formation/evolution of residual defects in implanted and rap...

N-type Czochralski silicon ingots - Oxygen-related defects in the last solid fraction

Haave, Bjørn

January 2016

The focus of this master's thesis has been the formation of oxygen-related defects in the last 10 cm...

Study of Flow Pattern Defects and Oxidation Induced Stacking Faults in Czochralski Single-Crystal Silicon Growth

Chao-Chun Yen
Anoop Kumar Singh
Yi-Min Chung
Hsin-Yu Chou
Dong-Sing Wuu

February 2023

This paper emphasizes that the furnace pressure, crucible rotation, and pulling rate have important ...

Microstructural Analysis of Epitaxial Layer Defects in Si Wafer

January 2010

Abstract The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by ...

Defect states in Czochalski p-type silicon: the role of oxygen and dislocations

A. Castaldini
D. Cavalcoli
A. Cavallini
S. Pizzini

January 2005

This contribution reports the study, by junction spectroscopies, of electronic states induced by the...

Defect states in Czochalski p-type silicon: the role of oxygen and dislocations

A. Castaldini
D. Cavalcoli
A. Cavallini
S. Pizzini

January 2005

This contribution reports the study, by junction spectroscopies, of electronic states induced by the...

Dopant, Defects and Oxygen Interaction In Mev Implanted Czochralski Silicon

A., Laferla
G., Galvagno
V., Raineri
F., Priolo
Carnera, Alberto
Gasparotto, Andrea
E., Rimini

January 1995

An oxygen precipitation phenomenon was evidenced on high energy implanted Czochralski silicon sample...

Defect states in Czochalski p-type silicon: the role of oxygen and dislocations

A. Castaldini
D. Cavalcoli
A. Cavallini
S. Pizzini

January 2005

This contribution reports the study, by junction spectroscopies, of electronic states induced by the...

Characterization and Elimination of Defects in Oxide Layers Grown on Czochralski Silicon Substrates

Manabu Itsumi

September 2016

Smal l defects in Czochralski silicon substrates are responsible for defect generation in oxide laye...

ELECTRON MICROSCOPICAL STUDY OF OXYGEN RELATED DEFECTS IN CZOCHRALSKI SILICON

Abstract

Extracted data

ELECTRON MICROSCOPICAL STUDY OF OXYGEN RELATED DEFECTS IN CZOCHRALSKI SILICON

Abstract

Extracted data

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