A STUDY OF THE GROUND STATE OF ACCEPTORS IN SILICON FROM THERMALTRANSPORT EXPERIMENTS

Thermal conductivity measurements of silicon crystals doped with B or In have shown the presence of several phonon scattering processes. Theresonant effect observed below 1 K is ascribed to the existence of a distribution of splittings N(δ) of the Ɖ8 ground state of the acceptor, which could be related to the presence of oxygen and carbon impurities. In twocases, the maximum of N(δ) occurs for δ max near 6 GHz, in agreement withprevious ultrasonic studies (δmax > 4 GHz)