PROPERTIES OF PURE SILICON AMORPHOUS FILMS PREPARED BY rf-BIAS SPUTTERING

Pure a-Si films were prepared by rf-bias sputtering with magnetron target. The substrate was ion-bombarded during deposition by rf-induced bias attempting to remove loosely bound materials from the surface. The electrical and optical properties of sputtered a-Si films were found to be improved by substrate bias without using dangling bond terminators, when sputtering voltage was lower than 1 kV and Ar pressure was higher than ~ 200 mTorr. ESR measurements revealed that the density of defect states was reduced by ion-bombardment during deposition