We have investigated magnetically-induced charge redistribution within a δ modulation-doped GaAs-AlxGa1-xAs heterojunction structure by studying the photoluminescence due to electrons from the two-dimensional (2D) electron system recombining with photoexcited holes. At well defined values of magnetic field, charge transfer occurs between this 2D electron system and the V-shaped potential well formed in the AlxGa1-xAs by Si δ modulation-doping. This redistribution of charge is observed as discontinuities in the photoluminescence energies. From these measurements we have derived the characteristic transfer time for electrons to move between these two wells. © 1998 Published by Elsevier Science Ltd. All rights reserved.1094267271Clark, R.G., H...
Self-consistent energy levels of electrons in modulation-doped GaAs/Ga1-xAlxAs heterostructures are ...
We have investigated, by means of photoluminescence (PL) and photoluminescence excitation (PLE) spec...
Low-temperature photoluminescence (PL) measurements of a pseudomorphic modulation-doped GaAs/In0.2G...
We have investigated magnetically-induced charge redistribution within a delta modulation-doped GaAs...
Landau-level oscillations are observed in the photoluminescence from an AlxGa1-xAs-GaAs single heter...
A strong spontaneous spatial modulation of the photoluminescence near the AlGaAs/GaAs heterojunction...
We report the first observation of negative persistent photoconductivity at 4.2 K in an n-channel mo...
The radiative recombination of quasi-two-dimensional electrons with photoexcited holes bound to acce...
We obtained the high mobility Of mu(2K) = 1.78 x 10(6) cm(2)/V . s in Si-doped GaAs/AlGaAs two-dimen...
175 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.This thesis describes a subse...
We study the energy structure of two-dimensional holes in p- type single Al1-xGaxAs/GaAs heterojunc...
Contains fulltext : 145271.pdf (publisher's version ) (Open Access
We report measurements of photo-luminescence from GaAs/AlGaAs heterojunctions in the ultra-quantum l...
This thesis describes a subset of phenomena at AIGaAs-GaAs heterointerfaces related to multiple quan...
We have observed a number of allowed and parity-forbidden Landau-level transitions in a modulation-d...
Self-consistent energy levels of electrons in modulation-doped GaAs/Ga1-xAlxAs heterostructures are ...
We have investigated, by means of photoluminescence (PL) and photoluminescence excitation (PLE) spec...
Low-temperature photoluminescence (PL) measurements of a pseudomorphic modulation-doped GaAs/In0.2G...
We have investigated magnetically-induced charge redistribution within a delta modulation-doped GaAs...
Landau-level oscillations are observed in the photoluminescence from an AlxGa1-xAs-GaAs single heter...
A strong spontaneous spatial modulation of the photoluminescence near the AlGaAs/GaAs heterojunction...
We report the first observation of negative persistent photoconductivity at 4.2 K in an n-channel mo...
The radiative recombination of quasi-two-dimensional electrons with photoexcited holes bound to acce...
We obtained the high mobility Of mu(2K) = 1.78 x 10(6) cm(2)/V . s in Si-doped GaAs/AlGaAs two-dimen...
175 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.This thesis describes a subse...
We study the energy structure of two-dimensional holes in p- type single Al1-xGaxAs/GaAs heterojunc...
Contains fulltext : 145271.pdf (publisher's version ) (Open Access
We report measurements of photo-luminescence from GaAs/AlGaAs heterojunctions in the ultra-quantum l...
This thesis describes a subset of phenomena at AIGaAs-GaAs heterointerfaces related to multiple quan...
We have observed a number of allowed and parity-forbidden Landau-level transitions in a modulation-d...
Self-consistent energy levels of electrons in modulation-doped GaAs/Ga1-xAlxAs heterostructures are ...
We have investigated, by means of photoluminescence (PL) and photoluminescence excitation (PLE) spec...
Low-temperature photoluminescence (PL) measurements of a pseudomorphic modulation-doped GaAs/In0.2G...