Spherical wave corrections in XAFS (x-ray absorption fine structure) are discussed using a new high-energy approximation based on asymptotic expansions. This approximation replaces the plane-wave approximation and is found to be in good agreement with exact treatments almost to the absorption edge. With this formulation the single-scattering XAFS formula is recovered in terms of distance-dependent back-scattering amplitudes. Multiple-scattering contributions in XAFS and spherical wave corrections in angular resolved photoemission are treated similarly
Modern XAFS (X-ray Absorption Fine Structure) data-analysis is based on accurate multiple-scattering...
We present the first a priori derivation of a many-body theory for EXAFS with clearly defined approx...
Extended x-ray absorption fine-structure (EXAFS) data collected in the fluorescence mode are suscep...
Spherical-wave corrections in x-ray-absorption fine structure (XAFS) are incorporated using a novel ...
A derivation of ARPEFS (Angular Resolved Photoelectron Spectroscopy Fine Structure) which generalize...
The siliconK-edgeEXAFS (extended X-rayabsorption fine structure) spectrum has been analyzed by spher...
The siliconK-edgeEXAFS (extended X-rayabsorption fine structure) spectrum has been analyzed by spher...
The silicon K-edge EXAFS spectrum was analyzed by spherical wave formalism. The agreement between t...
A new technique is proposed for calculating the extended X-ray absorption fine structure (EXAFS). Th...
Modern XAFS (x-ray absorption fine structure) data analysis is based on accurate multiple-scattering...
The improved phase shifts in the extended X-ray absorption fine structure (EXAFS) have been theoreti...
A theoretical method for obtaining formulae of the EXAFS is proposed on the basis of Lee's sche...
A theoretical calculation of the K-edge spectrum of silicon was performed. A good fit with the exper...
A theoretical calculation of the K-edge spectrum of silicon was performed. A good fit with the exper...
A generalized formalism for the EXAFS effect is presented. The full T operator in the Lippmann–Schwi...
Modern XAFS (X-ray Absorption Fine Structure) data-analysis is based on accurate multiple-scattering...
We present the first a priori derivation of a many-body theory for EXAFS with clearly defined approx...
Extended x-ray absorption fine-structure (EXAFS) data collected in the fluorescence mode are suscep...
Spherical-wave corrections in x-ray-absorption fine structure (XAFS) are incorporated using a novel ...
A derivation of ARPEFS (Angular Resolved Photoelectron Spectroscopy Fine Structure) which generalize...
The siliconK-edgeEXAFS (extended X-rayabsorption fine structure) spectrum has been analyzed by spher...
The siliconK-edgeEXAFS (extended X-rayabsorption fine structure) spectrum has been analyzed by spher...
The silicon K-edge EXAFS spectrum was analyzed by spherical wave formalism. The agreement between t...
A new technique is proposed for calculating the extended X-ray absorption fine structure (EXAFS). Th...
Modern XAFS (x-ray absorption fine structure) data analysis is based on accurate multiple-scattering...
The improved phase shifts in the extended X-ray absorption fine structure (EXAFS) have been theoreti...
A theoretical method for obtaining formulae of the EXAFS is proposed on the basis of Lee's sche...
A theoretical calculation of the K-edge spectrum of silicon was performed. A good fit with the exper...
A theoretical calculation of the K-edge spectrum of silicon was performed. A good fit with the exper...
A generalized formalism for the EXAFS effect is presented. The full T operator in the Lippmann–Schwi...
Modern XAFS (X-ray Absorption Fine Structure) data-analysis is based on accurate multiple-scattering...
We present the first a priori derivation of a many-body theory for EXAFS with clearly defined approx...
Extended x-ray absorption fine-structure (EXAFS) data collected in the fluorescence mode are suscep...