E 1 Gap Of Wurtzite Inas Single Nanowires Measured By Means Of Resonant Raman Spectroscopy

Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215cm -1 reveals an E 1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase. © 2011 American Institute of Physics.1399473474 Int. Union Pure Appl. Phys. (IUPAP C8 Comm.),Korean Ministry of Education, Science and Technology,Seoul Metropolitan Government,Office of Naval Research Global,Korea Tourism OrganizationDick, K.A., (2008) Prog. Cryst. Growth Charact. Mater., 54, pp. 138-173Milnes, A.G., Polyakov, A.Y., (1993) Mater. Sci. Eng. B, 18, pp. 237-259Dayeh, S.A., Susac, D., Kavanagh, K.L., Yu, E.T., Wang, D., (2009) Adv. Mater., 19, pp. 2102-2108Cardona, M., (1961) J. Appl. Phys., 32 (SUPPL.), pp. 2151-2155Antoci, S., Reguzzoni, E., Samoggia, G., (1970) Phys. Rev. Lett., 24, pp. 1304-1307Arguello, C.A., Rousseau, D.L., Porto, S.P.S., (1969) Phys. Rev., 181, pp. 1351-136