Optically excited paramagnetic centers in amorphous hydrogenated germanium (a-Ge:H) are reported. The light induced electron spin resonance (LESR) spectra are comprised of two components, which are ascribed to electrons and holes in the conduction- and valence-band-tail states, respectively. There is no evidence of spin pairing, charge defect creation or LESR of Ge dangling bonds. Over about three orders of magnitude in light intensity the decay curves are dispersive with a dispersive parameter of ∼0.5. The spectra are best fit assuming bimolecular recombination. The LESR spin density depends only weakly on the photo-generation rate. © 2000 Elsevier Science B.V. All rights reserved.266-269 B717720Brodsky, M.H., Title, R.S., (1969) Phys. Rev...
International audienceWe have investigated optical orientation in the vicinity of the direct gap of ...
Electron paramagnetic resonance in amorphous germanium (a-Ge) alloy films containing varying concent...
The field sweep spectra of dangling bonds (db) in a-Si:H and a-Ge:H are strongly influenced by the p...
We report the observation of light-induced electron spin resonance (LESR) in amorphous hydrogenated ...
International audienceWe present a first-principles investigation of Ge paramagnetic centers in Ge-d...
Ge-S glasses are synthesised by melting pure S and Ge elements. Electron paramagnetic resonance (EPR...
We present quadrature frequency resolved spectroscopy (QFRS) measurements of photoluminescence (PL) ...
212 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1981.In Part I of this thesis, we ...
29Si hyperfine (hf) structures of light-induced electron-spin-resonance (LESR) centers of g=2.004 an...
Abstract.- Photoluminescence and electron spin resonance measurements have been performed in bulk a-...
The authors report on the optoelectronic properties of high-quality a-Ge:H films prepared by the RF ...
We have studied the generation mechanisms of H(II) paramagnetic centers in Ge-doped silica by invest...
This thesis presents a detailed study of paramagnetic defects in hydrogenated amorphous silicon a S...
Optical Detection of Magnetic Resonance (ODMR) has been used to observe both paramagnetic and diamag...
Paramagnetic centers in hydrogenated microcrystalline silicon, µc-Si:H have been studied using dark ...
International audienceWe have investigated optical orientation in the vicinity of the direct gap of ...
Electron paramagnetic resonance in amorphous germanium (a-Ge) alloy films containing varying concent...
The field sweep spectra of dangling bonds (db) in a-Si:H and a-Ge:H are strongly influenced by the p...
We report the observation of light-induced electron spin resonance (LESR) in amorphous hydrogenated ...
International audienceWe present a first-principles investigation of Ge paramagnetic centers in Ge-d...
Ge-S glasses are synthesised by melting pure S and Ge elements. Electron paramagnetic resonance (EPR...
We present quadrature frequency resolved spectroscopy (QFRS) measurements of photoluminescence (PL) ...
212 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1981.In Part I of this thesis, we ...
29Si hyperfine (hf) structures of light-induced electron-spin-resonance (LESR) centers of g=2.004 an...
Abstract.- Photoluminescence and electron spin resonance measurements have been performed in bulk a-...
The authors report on the optoelectronic properties of high-quality a-Ge:H films prepared by the RF ...
We have studied the generation mechanisms of H(II) paramagnetic centers in Ge-doped silica by invest...
This thesis presents a detailed study of paramagnetic defects in hydrogenated amorphous silicon a S...
Optical Detection of Magnetic Resonance (ODMR) has been used to observe both paramagnetic and diamag...
Paramagnetic centers in hydrogenated microcrystalline silicon, µc-Si:H have been studied using dark ...
International audienceWe have investigated optical orientation in the vicinity of the direct gap of ...
Electron paramagnetic resonance in amorphous germanium (a-Ge) alloy films containing varying concent...
The field sweep spectra of dangling bonds (db) in a-Si:H and a-Ge:H are strongly influenced by the p...