Er Environment In A-si:h<er> Prepared By Pecvd

The Er local environment of a-Si:H&lt;Er&gt; prepared by PECVD using a metalorganic precursor was determined by EXAFS. We found that in as-deposited samples Er is coordinated to 6 oxygen atoms at 2.28±0.01Å, very similar to Er2O3. Annealing at 420°C hardly affects the Er neighbor-hood, but higher annealing temperatures (starting at 600°C up to 1033°C) decrease the Er-O separation as much as 0.05Å, maintaining the Er average coordination around 6. This is interpreted as due to the formation of a carbon second neighbor shell. Our results show that the Er local environment is not related with the luminescence enhancement for annealing at moderate temperatures.609A1121A1126Michel, J., Benton, J.L., Ferrante, R.F., Jacobson, D.C., Eaglesham, D.F., Fitzgerald, E.A., Xie, Y.-H., Kimerling, L.C., (1991) J. Appl. Phys., 70, p. 2672Lombardo, S., Campisano, S.U., Van den Hoven, G.V., Cacciato, A., Polman, A., (1993) Appl. Phys. Lett., 63, p. 1942Tessler, L.R., (1999) Braz. J. Phys., 29, p. 616Bressler, M.S., Gusev, O.B., Kudoyarova, V.Kh., Kuznetsov, A.N., Pak, P.E., Terukov, E.I., Yassievich, I.N., Sturm, A., (1995) Appl. Phys. Lett., 67, p. 3599Shin, J.H., Serna, R., Van den Hoven, G.N., Polman, A., Van Sark, W.G.J.H.M., Vredenberg, A.M., (1996) Appl. Phys. Lett., 68, p. 997Terukov, E.I., Kon'kov, O.I., Kudoyarova, V.Kh., Gusev, O.B., Weiser, G., (1998) Semiconductors, 32, p. 884Tessler, L.R., Piamonteze, C., Iñiguez, A.C., Martins Alves, M.C., Tolentino, H., (1998) Mat. Res. Soc. Proc., 524, pp. 327-332. , Applications of Synchrotron Radiation Techniques to Materials Science IV, ed. S. M. Mini, D. L. Perry, S. R. Stock and L. J. Terminello, PittsburghPiamonteze, C., Iñiguez, A.C., Tessler, L.R., Martins Alves, M.C., Tolentino, H., (1998) Phys. Rev. Lett., 81, p. 4652Masterov, V.F., Nasredinov, F.S., Seregin, P.P., Kudoyarova, V.Kh., Kuznetsov, A.N., Terukov, E.I., (1998) Appl. Phys. Lett., 72, p. 728Masterov, V.F., Nasredinov, F.S., Seregin, P.P., Terukov, E.I., Mezdrogina, M.M., (1998) Semi-conductors, 32, p. 636Terukov, E.I., Kon'kov, O.I., Kudoyarova, V.Kh., Gusev, O.B., (1999) Semiconductors, 33, p. 177Ressler, T., (1997) J. Physique IV, 7, pp. C2-C269Andry, P.S., Varhue, W.J., Ladipo, F., Ahmed, K., Adams, E., Lavole, M., Klein, P.B., Hunter, J., (1996) J. Appl. Phys., 80, p. 551Tessler, L.R., Piamonteze, C., Martins Alves, M.C., Tolentino, H., (2000) J. Non-Cryst. Solids, 266, p. 59