Donor-photoluminescence Line Shapes From Gaas-(ga,al)as Quantum Wells

The D°-h impurity-related photoluminescence spectra of confined donors in GaAs-(Ga,Al)As quantum wells is theoretically investigated within the effective-mass approximation. The impurity wave functions and binding energies are evaluated via a variational procedure. Calculations are performed for different well widths, temperatures, and impurity doping profiles. Typical D-h theoretical photoluminescence line shapes show peaked structures corresponding to on-center and on-edge donors in good agreement with experimental results. © 1993 The American Physical Society.4742406240