Plasma Etching Of Polycrystalline Silicon Using Thinning Technology For Application In Cmos And Mems Technologies

This work presents results of the study of profile evolution for Si-poly structures during plasma etching using the thinning technology in SF6/CF4/CHF3 gas mixtures. Structures with an aspect ratio (height/width) up to 5, widths end in the range of 0.3 - 0.1 μm and 0.3μm thick, were produced. Sipoly structures with high anisotropy (anisotropy factor up to 0.92-0.98) after etching were demostrated. The method can be used for fabrication of sub-micron Si-poly gates in CMOS and in fabrication of MEMS devices.227480Oehrlein, G.S., Doemling, M.F., Kastenmeier, B.E.E., Matsuo, P.J., Rueger, N.R., Schaepkens, M., Standaert, T.E.F.M., (1999) IBM J. Research and Development, 43 (1-2), pp. 181-196Song, Y.S., Kim, J.W., Chung, C.W., (2004) Thin Solid Films, 467, pp. 172-175Laermer, F., Urban, A., (2003) Microelectron. Eng, 67-68, pp. 349-355Nunes, A.M., Tatsch, P.J., Moshkalyov, S.A., Daltrini, A.M., Machida, M., (2005) Proceedings of the 8° Encontro Brasileiro de Fisica dos Plasmas, , Niteroi-RJTuda, M., Shintani, K., Tanimura, J., (2003) Plasma Sources Sci. Technol, 12, pp. S72-S79Braithwaite, N.S.J., Matsuura, T., (2004) Contrib. Plasma Phys, 44 (5-6), pp. 478-484Tserepi, A., Gogolides, E., Cardinaud, C., Rolland, L., Turban, G., (1998) Microelectron. Eng, 411 (41-42), pp. 411-414Foucher, J., Cunge, G., Vallier, L., Joubert, O., (2002) Microelectron. Eng, 61-62, pp. 849-857Kern, RCA Review, 31, 187, 1970Teixeira, R.C., Doi, I., Zakia, M.B.P., Diniz, J.A., Swart, J.W., (2005) Mat. Sci. Eng. B, 124-125, pp. 138-142Dreeskornfeld, L., Hartwich, J., Kretz, J., Risch, L., Roesner, W., Schmitt-Landsiedel, D., (2002) J.Vac.Sci.Technol. B, 20 (6), pp. 2777-277