The room temperature cathodoluminescence of non-stoichiometric amorphous silicon carbide and nitride produced by glow discharge is reported. The photoluminescence emission and excitation spectra of silicon carbide samples are presented. Also, it was observed that the powder deposited onto the contraelectrode during the discharge shows efficient room temperature photo luminescence emission. © 1989.1151-34244GSK; GlaxoSmithKlineLeamy, Charge collection scanning electron microscopy (1982) Journal of Applied Physics, 53 (6)Alvarez, Fragnito, Prieto, Chambouleyron, Visible light emission from reverse biased amorphous silicon carbide P-I-N structures (1987) Journal of Non-Crystalline Solids, 97-98, p. 131
Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC...
Cathodoluminescence has been used to investigate room-temperature light emission from dislocations g...
The enhanced red photoluminescence (PL) from Si-rich amorphous silicon carbide (a-SiCx) films was an...
The emission at room temperature of visible light (near infrared) from reverse biased (forward biase...
The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf ...
Amorphous SiC thin films with varying phases and compositions have been synthesized using a low freq...
The cathodoluminescence (CL) technique is used to analyse the radiative recombination properties of ...
This paper presents the combustion synthesis and characterization of one-dimensional silicon carbide...
Silicon oxycarbide (SiCxOy) is a promising material for achieving strong room-temperature white lumi...
The cathodoluminescence (CL) technique is used to analyse the radiative recombination properties of ...
The room temperature photoluminescence of single crystals of SiC was investigated. Broad emission ba...
Amorphous SiC films have been deposited by pulsed laser ablation on silicon substrates. Photolumines...
Cathodoluminescence (CL) technique has been employed to study the optical properties of GaSb after d...
Cathodoluminescence (CL) microscopy and spectroscopy have been used to investigate the nature and sp...
Hydrogenated amorphous silicon nitride (a-SiNx:H) samples have been prepared by plasma enhanced chem...
Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC...
Cathodoluminescence has been used to investigate room-temperature light emission from dislocations g...
The enhanced red photoluminescence (PL) from Si-rich amorphous silicon carbide (a-SiCx) films was an...
The emission at room temperature of visible light (near infrared) from reverse biased (forward biase...
The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf ...
Amorphous SiC thin films with varying phases and compositions have been synthesized using a low freq...
The cathodoluminescence (CL) technique is used to analyse the radiative recombination properties of ...
This paper presents the combustion synthesis and characterization of one-dimensional silicon carbide...
Silicon oxycarbide (SiCxOy) is a promising material for achieving strong room-temperature white lumi...
The cathodoluminescence (CL) technique is used to analyse the radiative recombination properties of ...
The room temperature photoluminescence of single crystals of SiC was investigated. Broad emission ba...
Amorphous SiC films have been deposited by pulsed laser ablation on silicon substrates. Photolumines...
Cathodoluminescence (CL) technique has been employed to study the optical properties of GaSb after d...
Cathodoluminescence (CL) microscopy and spectroscopy have been used to investigate the nature and sp...
Hydrogenated amorphous silicon nitride (a-SiNx:H) samples have been prepared by plasma enhanced chem...
Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC...
Cathodoluminescence has been used to investigate room-temperature light emission from dislocations g...
The enhanced red photoluminescence (PL) from Si-rich amorphous silicon carbide (a-SiCx) films was an...