Visible Light Emission From Reverse Biased Amorphous Silicon Carbide P-i-n Structures

The emission at room temperature of visible light (near infrared) from reverse biased (forward biased) silicon carbide p-i-n heterostructures is reported. The mechanisms of carrier injection at room and at low temperatures are studied. An exciton-like recombination mechanism explains both, the short recombination time and the improved efficiency observed in samples with higher carbon concentration. © 1987.97-98PART 213191322Kruagan, Endo, Guang-Pu, Nomura, Okamoto, Hamakawa, (1985) J. Non-Crust. Solid., 77-78, p. 1429Tsang, Street, (1979) Phys. Rev. B, 19 (6), p. 3027Alvarez, Chambouleyron, (1984) Solar Energy Mat., 10, p. 151. , Due to the lack of data, the mobility value was taken to be the same as in an a-SiNx:H alloy of similar band ga