Photoelectron diffraction study and structure determination of ultrathin hafnium silicide layers on silicon(1 0 0) using Mg K? radiation and synchrotron light

DAAD - DEUTSCHER AKADEMISCHER AUSTAUSCHDIENSTCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL E NÍVEL SUPERIORDFG - DEUTSCHE FORSCHUNGSGEMEINSCHAFTIn order to increase the switching speed and the efficiency of modern semiconductor devices a further down scaling is desired. Thus, the SiO2 gate dielectric might be replaced by layers of a material with a much higher dielectric constant like HfO2. A major problem of the system HfO2/Si(1 0 0) is the silicidation of hafnium at the interface. Therefore, ultrathin films (3-30 Å) of HfSi2 on Si(1 0 0) were investigated by photoelectron spectroscopy, low-energy electron diffraction and X-ray photoelectron diffraction. Synchrotron light with an energy of hν = 180 eV was used for excitation. First results were obtained using a Mg X-ray tube (hν = 1253.6 eV). In order to determine the structure of the films, the recorded photoelectron diffraction patterns were compared to computer simulations of model structures. The simulations for the low-energy measurements were performed using the program MSPHD. As a result a modified zirconium silicide structure is presented in order to describe the structure of ultrathin HfSi2 films on Si(1 0 0). © 2006 Elsevier B.V. All rights reserved.In order to increase the switching speed and the efficiency of modern semiconductor devices a further down scaling is desired. Thus, the SiO2 gate dielectric might be replaced by layers of a material with a much higher dielectric constant like HfO2. A major problem of the system HfO2/Si(1 0 0) is the silicidation of hafnium at the interface. Therefore, ultrathin films (3-30 A) of HfSi2 on Si(1 0 0) were investigated by photoelectron spectroscopy, low-energy electron diffraction and X-ray photoelectron diffraction. Synchrotron light with an energy of h? = 180 eV was used for excitation. First results were obtained using a Mg X-ray tube (h? = 1253.6 eV). In order to determine the structure of the films, the recorded photoelectron diffraction patterns were compared to computer simulations of model structures. The simulations for the low-energy measurements were performed using the program MSPHD. As a result a modified zirconium silicide structure is presented in order to describe the structure of ultrathin HfSi2 films on Si(1 0 0).10. International Conference on Electronic Spectroscopy and Structure1569296DAAD - DEUTSCHER AKADEMISCHER AUSTAUSCHDIENSTCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL E NÍVEL SUPERIORDFG - DEUTSCHE FORSCHUNGSGEMEINSCHAFTDAAD - DEUTSCHER AKADEMISCHER AUSTAUSCHDIENSTCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL E NÍVEL SUPERIORDFG - DEUTSCHE FORSCHUNGSGEMEINSCHAFT415-BR-PROBRAL-D-03-23553PROBRAL 170/04We 1649/7-1Wilk, G., Wallace, R., Anthony, J., (2001) J. Appl. Phys., 89 (10), p. 5243Först, C.J., Ashman, C., Schwarz, K., Blöchl, P., (2004) Nature, 427, p. 53Lupina, G., Schroeder, T., Dabrowski, J., Wenger, C., Mane, A.-U., Müssig, H.-J., Hoffmann, P., Schmeisser, D., (2006) J. Appl. Phys., 99 (11), p. 114109Hubbard, T.J., Schlom, D.G., (1996) J. Mater. Res., 11, p. 2757Jablonski, A., Powell, C., (2002) Surf. Sci. Rep., 47, p. 33de Siervo, A., Flüchter, C., Weier, D., Schürmann, M., Dreiner, S., Carazzolle, M., Pancotti, A., Westphal, C., (2006) Phys. Rev. B, 74, p. 75319Gunella, R., Solal, F., Sébilleau, D., Natoli, C.R., (2000) Comp. Phys. Commun., 132, pp. 251-266Pendry, J.B., (1980) J. Phys. C, 13, pp. 937-944Dreiner, S., Westphal, C., Schürmann, M., Zacharias, H., (2003) Thin Solid Films, 428, pp. 123-128Johnson-Steigelman, H.T., Brinck, A.V., Parihar, S.S., Lyman, P.F., (2004) Phys. Rev. B, 69, p. 235322Smith, J.F., Bailey, D.M., (1957) Acta Cryst., 10, p. 341Bourret, A., d'Heurie, F., Goues, F.L., Charai, A., (1990) J. Appl. Phys., 67 (1), pp. 241-246Schubert, K., (1964) Kristallstrukturen zweikomponentiger Phasen, , Springer-Verlag, BerlinLee, J.-H., Ichikawa, M., (2002) J. Vac. Sci. Technol. A, 20, p. 1824Lee, J., (2004) J. Korean Phys. Soc., 44 (6), p. 159028 de Agosto a 01 de Setembro de 2006Foz do Iguaçu, Brasi