Temperature Dependence Of The Radius Of Electron-hole Drops In Ge

The temperature dependence of the radius of electron-hole drops in Ge is determined from measurements of the number of particles in the drops using the p-n junction technique. The drop radius is found to increase from 5.5μ at 1.7 K to 10μ at 3.2 K for an excitation intensity of 160 mWatt/mm2. As a function of excitation level at 1.8 K the drop radius is found to increase from 2.9μ at 8 mWatt/mm2 to 6.5μ at 300 mWatt/mm2. Our data are compared to results available in this field. © 1977.235271273Benoit, Voos, Salvan, Laurent, Bonnot, (1971) A. Compt. Rend. Acad. Sc., 272 B, p. 236. , See, for exampleBagaev, Penin, Sibeldin, Tsvetkov, (1973) Fiz. Tverd. Tela, 15, p. 3269Sov. Phys. Solid State Com. (1974) Sov. Phys. Solid State Com., 15, p. 2179Alekseev, Astemirov, Bagaev, Galkina, Penin, Sibeldin, Tsvetkov, (1974) Proceedings of the Twelfth International Conference of the Physics of Semiconductors, p. 91. , M.H. Pilkuhn, Stuttgart, Germany, 1974, tenbrer, Stuttgart, GermanyBagaev, Zamkovetz, Keldish, Sibeldin, Tsvetkov, (1975) Preprint n°. 139, , Lebedev Fiz. Inst, MoscowPokrovskii, (1972) Phys. Status Solid (a), 11, p. 385Silver, (1975) Phys. Rev., 11 B, p. 1569Etienne, Benoit, Voos, (1975) Phys. Rev. Letters, 35, p. 536Voos, Benoit, (1976) Optical properties of Solids, p. 143. , B.O. Seraphin, North-Holland, AmsterdamBagaev, Keldysh, Sibeldin, Tsvetkov, (1975) Preprint n°. 117, , Levedev Fiz. Inst, Mosco